TSM2305CXRFG

TSM2305CXRFG

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM2305CXRFG - 20V P-Channel MOSFET - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSM2305CXRFG 数据手册
TSM2305 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(m ) 52 @ VGS =-4.5V -20 71 @ VGS =-2.5V 108 @ VGS =-1.8V ID (A) -3.2 -2.7 -2.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Battery Management High Speed Switch Ordering Information Part No. TSM2305CX RFG Package SOT-23 Packing 3Kpcs / 7” Reel P-Channel MOSFET Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG TA=25 C TA=75 C Limit -20 ±8 -3.2 -10 -1 1.25 Unit V V A A A W 0.8 +150 -55 to +150 o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 10 sec. Symbol RӨJC RӨJA Limit 80 150 Unit o o C/W C/W 1/6 Version: B11 TSM2305 20V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Diode Forward Voltage b Dynamic Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching b.c Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±8V, VDS = 0V VDS = -16V, VGS = 0V VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.7A VGS = -1.8V, ID = -2.0A IS = -1A, VGS = 0V VGS = VDS =0V, f=1MHz VDS = -10V, ID = -3.2A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0MHz Symbol BVDSS VGS(TH) IGSS IDSS RDS(ON) VSD Rg Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -20 -0.45 ------------------ Typ --0.7 --44 65 90 -0.8 10 10 0.7 4 990 125 100 12 23 50 18 Max --1 ±100 1.0 52 71 108 -1.3 -20 -----24 50 100 35 Unit V V nA µA m V nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -10V, RL = 15 , ID = -1A, VGEN = -4.5V, nS RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/6 Version: B11 TSM2305 20V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: B11 TSM2305 20V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Capacitance Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: B11 TSM2305 20V P-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.25 2.55 0.089 0.100 1.20 1.40 0.047 0.055 2.80 3.00 0.110 0.118 0.90 1.15 0.035 0.045 0.00 0.10 0.000 0.004 0.30 0.50 0.012 0.020 0.08 0.15 0.003 0.006 0.30 0.50 0.012 0.020 5º 10º 5º 10º Marking Diagram 05 = Device Code Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: B11 TSM2305 20V P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B11
TSM2305CXRFG
1. 物料型号: - 型号:TSM2305 - 封装:SOT-23

2. 器件简介: - TSM2305是一款20V P-Channel MOSFET,采用先进的沟槽工艺技术,具有高密度单元设计,用于超低导通电阻。

3. 引脚分配: - 1. Gate(栅极) - 2. Source(源极) - 3. Drain(漏极)

4. 参数特性: - 漏源电压(VDS):-20V - 栅源电压(VGS):±8V - 连续漏极电流(ID):-3.2A - 脉冲漏极电流(IDM):-10A - 连续源极电流(IS):-1A - 最大功率耗散(PD):1.25W(TA=25°C),0.8W(TA=75°C) - 工作结温(TJ):+150°C - 热性能参数:结到外壳热阻(RθJC)80°C/W,结到环境热阻(RθJA)150°C/W

5. 功能详解: - 该器件适用于电池管理、高速开关等应用。 - 具有低导通电阻、高速开关特性。

6. 应用信息: - 电池管理 - 高速开关

7. 封装信息: - 封装类型:SOT-23 - 包装:3Kpcs / 7”卷轴 - 标记:"G"表示无卤产品
TSM2305CXRFG 价格&库存

很抱歉,暂时无法提供与“TSM2305CXRFG”相匹配的价格&库存,您可以联系我们找货

免费人工找货