TSM2310CXRF

TSM2310CXRF

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM2310CXRF - 20V N-Channel MOSFET - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSM2310CXRF 数据手册
TSM2310 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V ID (A) 4 3.2 2.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM2310CX RF Package SOT-23 Packing 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 20 ±12 4 15 1.0 1.25 0.8 +150 -55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJF RӨJA Limit 75 160 Unit o o C/W C/W 1/6 Version: B09 TSM2310 20V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±4.5V, VDS = 0V VDS = 16V, VGS = 0V VDS ≥ 10V, VGS = 4.5V VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3.2A VGS = 1.8V, ID = 2A VDS = 15V, ID = 4A IS = 1.6A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min 20 0.6 --15 ---------------- Typ -0.8 ---24 32 80 40 0.8 8.6 2 2 .7 550 100 30 15 20 40 8 Max -1.2 ±100 1.0 -30 40 100 -1.2 ----------- Unit V V nA µA A mΩ S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 10V, ID = 4A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, nS RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: B09 TSM2310 20V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25\oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: B09 TSM2310 20V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: B09 TSM2310 20V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram 10 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: B09 TSM2310 20V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B09
TSM2310CXRF
1. 物料型号: - 型号为TSM2310,是一款20V N-Channel MOSFET。

2. 器件简介: - TSM2310是一款采用先进沟槽工艺技术和高密度单元设计的N沟道MOSFET,具有超低导通电阻。

3. 引脚分配: - 1. Gate(栅极) - 2. Source(源极) - 3. Drain(漏极)

4. 参数特性: - 最大漏源电压(VDs):20V - 栅源电压(VGs):±12V - 连续漏电流(ID):在VGs=4.5V时为4A - 脉冲漏电流(IDM):在Vcs=4.5V时为15A - 最大功率耗散(PD):在Ta=25°C时为1.25W,在Ta=75°C时为0.8W - 工作结温(T):+150°C - 热阻(RθJC):75°C/W(结到壳),RθJA:160°C/W(结到环境,PCB安装)

5. 功能详解: - 该器件具有低导通电阻、高密度单元设计,适用于负载开关和功率放大器开关等应用。

6. 应用信息: - 适用于负载开关(Load Switch)和功率放大器开关(PA Switch)。

7. 封装信息: - 封装类型为SOT-23,包装为3Kpcs/7"卷。
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