TSM2311

TSM2311

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM2311 - 20V P-Channel Enhancement Mode MOSFET - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSM2311 数据手册
TSM2311 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2311CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit - 20V ±8 -4 - 20 1.25 0.8 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t
TSM2311
1. 物料型号: - 型号:TSM2311CX - 封装:SOT-23 - 包装:Tape & Reel(卷带包装)

2. 器件简介: - TSM2311是一款20V P-Channel增强型MOSFET,采用先进的沟槽工艺技术和高密度单元设计,具有超低导通电阻,优秀的热和电性能,以及紧凑且低轮廓的SOT-23封装。

3. 引脚分配: - Pin 1: Gate(栅极) - Pin 2: Source(源极) - Pin 3: Drain(漏极)

4. 参数特性: - 漏源电压(VDS):-20V - 连续漏电流(ID):-4A - 脉冲漏电流(IDM):-20A - 最大功耗(P0):1.25W(25°C时)/ 0.8W(75°C时) - 工作结温(TJ):+150°C - 存储和工作结温范围(TJ,TSTG):-55至+150°C - 引脚至环境热阻(RθJA,PCB安装):100°C/W

5. 功能详解: - 该器件具有低导通电阻、高阈值电压和优秀的热电性能,适用于需要高电压和低导通电阻的应用场合。

6. 应用信息: - 由于其高电压和低导通电阻的特性,TSM2311适用于电源管理、电机控制和开关电源等应用。

7. 封装信息: - 封装类型:SOT-23 - 机械尺寸详细图纸已提供,包括最小和最大尺寸,单位为毫米和英寸。
TSM2311 价格&库存

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