TSM2311
20V P-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(m )
-20 55 @ VGS = -4.5V 85 @ VGS = -2.5V
ID (A)
-4.0 -2.5
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Load Switch PA Switch P-Channel MOSFET
Ordering Information
Part No.
TSM2311CX RF TSM2311CX RFG
Package
SOT-23 SOT-23
Packing
3Kpcs / 7” Reel 3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V. Pulsed Drain Current, VGS @ 4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
-20 ±8 -4 -20 -0.72 0.9 0.57 +150 - 55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. c. Surface Mounted on FR4 Board,
Symbol
TL RӨJA
Limit
5 250
Unit
S
o
C/W
1/6
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance
a a a
Conditions
VGS = 0V, ID = -250uA VDS = VGS, ID = -250µA VGS = ±8V, VDS = 0V VDS = -16V, VGS = 0V VDS ≥-10V, VGS = -5V VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -2.5A VDS = -5V, ID = -4A IS = -0.75A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
-20 -0.6 ---6 ---------------
Typ
-----45 75 9 - 0.8 6 1.4 1.9 640 180 90 22 35 45 25
Max
--1.4 ±100 -1.0 -55 85 --1.2 9 -----35 55 70 50
Unit
V V nA µA A m S V
Forward Transconductance Diode Forward Voltage Dynamic
b
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = -6V, ID = -4A, VGS = -4.5V VDS = -6V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = -6V, RL = 6 , ID = -1A, VGEN = -4.5V, RG = 6
nS
Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.
2/6
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B11
TSM2311
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º
Marking Diagram
11 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
5/6
Version: B11
TSM2311
20V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
6/6
Version: B11