Preliminary
TSM2328
100V N-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(m )
100 250 @ VGS =10V
ID (A)
1.5
General Description
The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-industrial applications
Features
● ● ● Low RDS(ON) 250m (Max.) Low gate charge typical @ 11.1nC (Typ.) High performance trench technology
Block Diagram
Ordering Information
Part No.
TSM2328CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Continuous Source Current (Diode Conduction) Total Power Dissipation @ TA = 25 C Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature
o
Symbol
VDS VGS ID IDM IS PD TJ TSTG
Limit
100 ±20 1.5 6 0.6 1.38 150 -55 to +150
Unit
V V A A A W ºC
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Foot Thermal Resistance - Junction to Ambient Note 1: Surface mounted on 1” x 1” FR4 Note 2: Pules width limited by maximum junction temperature
Symbol
RӨJF RӨJA
Limit
55 100
Unit
o o
C/W C/W
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Version: Preliminary
Preliminary
TSM2328
100V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transfer Conductance Diode Forward Voltage Dynamic
(1)
Conditions
VGS = 0V, ID = 250uA VGS = 10V, ID = 1.5A VDS = VGS, ID = 250uA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VDS = 5V, VGS = 10V VDS = 15V, ID = 1.5A IS = 1A, VGS = 0V
Symbol
BVDSS RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs VSD
Min
100 -1.0 --6 ---
Typ
------4 1.2
Max
-250 2.5 1 ±100 ----
Unit
V m V uA nA A S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
(2)
Qg VDS = 80V, ID = 1.5A, VGS = 5V Qgs Qgd Ciss VDS = 25V, VGS = 0V, f = 1.0MHz Coss Crss
-------
11.1 4.4 3 975 38 27
------pF nC
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Note 1: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 2: Guaranteed by design, not subject to production testing VDD = 30V, ID = 1A, VGEN = 10V, RL =30 , RG =6
td(on) tr td(off) tf
-----
9 9.4 26.8 2.6
----nS
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Version: Preliminary
Preliminary
TSM2328
100V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º
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Version: Preliminary
Preliminary
TSM2328
100V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: Preliminary
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