TSM25N03

T S M2 5 N 0 3 25V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 14 @ VGS = 10V 19 @ VGS = 4.5V TO-252 Pin Definition: 1. Gate 2. Drain 3. Source ID (A) 25 25 Features ● ● Advance Trench Process Technology High D ensity Cell Design for Ultr a Low On-resistance Block Diagram Application ● ● Load Switch Dc-DC Converters and Motors Drivers Ordering Information Part No. TSM25N 03C P R O Package TO-252 Packi ng 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (D iode Conduc tion) a,b Symbol VDS VGS ID IDM IS EAS o o Limit 25 ± 20 25 100 20 45 60 23 +1 5 0 - 55 t o + 150 Unit V V A A A mJ W o o Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH , RG=25Ω) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C Ta = 70 C PD TJ TJ, TSTG C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Case Thermal R esistance Junction to Ambient Ther mal Resis tance (PC B mounted) Notes: a. Maximum DC current limited by the package b. Sur face Mounted on 1” x 1” FR4 Board, t ≤ 10 sec. Symbol TL R ӨJ C R ӨJ A Limit 10 1.8 40 Unit S o o C/W C/W 1/ 6 Version: A07 T S M2 5 N 0 3 25V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic b Conditi ons VGS = 0V, ID = 250uA VDS = VGS, ID = 250uA VGS = ±20V, VDS = 0V VDS = 25V, VGS = 0V VDS ≥5V, VGS = 10V VGS = 4.5V, ID = 25A VGS = 10V, ID = 25A VDS = 15V, ID = 15A IS = 20A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gf s VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Mi n 25 1.0 --25 --------------- Ty p -1.9 ---14.5 9.5 12 0.87 14.7 2.5 3 921 208.7 108.2 20.2 5.9 49.5 16.7 Max -3.0 ± 100 1.0 -19 14 -1.5 26 ---------- Unit V V nA uA A mΩ S V Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching c VDS = 15V, ID = 25A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, nS R G = 16Ω Turn-Off Fall Time tf Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature. 2/ 6 Version: A07 T S M2 5 N 0 3 25V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output C haracterist ics Transf er C haracteristics On-Resistance vs. Drain Current Gate C harge On-Resistance vs. Junct ion Temperature Source-Drain D iode Forward Voltage 3/ 6 Version: A07 T S M2 5 N 0 3 25V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate- Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/ 6 Version: A07 T S M2 5 N 0 3 25V N-Channel MOSFET SOT-252 Mechanical Drawing TO-252 DIMENS ION DIM A A1 B C D E F G G1 G2 H I J K L M MILLIMETERS MIN MA X 2.3BSC 4.6BSC 6.80 5.40 6.40 2.20 0.00 5.20 0.75 0.55 0.35 0.90 2.20 0.50 0.90 1.30 7.20 5.60 6.65 2.40 0.20 5.40 0.85 0.65 0.65 1.50 2.80 1.10 1.50 1.70 INCHES MIN MA X 0.09BSC 0.18BSC 0.268 0.213 0.252 0.087 0.000 0.205 0.030 0.022 0.014 0.035 0.087 0.020 0.035 0.051 0.283 0.220 0.262 0.094 0.008 0.213 0.033 0.026 0.026 0.059 0.110 0.043 0.059 0.67 Marking Diagram Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov , L=Dec) L = Lo t C ode 5/ 6 Version: A07 T S M2 5 N 0 3 25V N-Channel MOSFET Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these produc ts for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/ 6 Version: A07