TSM2N60CH

TSM2N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 600V I D = 2A RDS (on), Vgs @ 10V, Ids @ 1.0A =4.4Ω General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No. TSM2N60CP TSM2N60CH Packing Tape & Reel Tube Package TO-252 TO-251 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 oC Ta > 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) TJ TJ, TSTG EAS o Symbol VDS VGS ID IDM PD Limit 600V ± 30 2 9 50 0.4 +150 - 55 to +150 20 Unit V V A A W W/oC o o C C mJ Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t