TSM2N60_07

T S M2 N 6 0 600V N-Channel Power MOSFET TO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 4.4 @ VGS =10V ID (A) 1 General Description The TSM2N 60 is used an advanced ter mination scheme to provide enhanced voltage-blocking capability without degrading per formance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies , converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating ar eas are critical and offer additional and safety margin against unexpected voltage transients. Features ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is charac terized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fas t recovery diode. Block Diagram Ordering Information Part No. TSM2N60CP RO TSM2N60CH C 5 TSM2N60CZ C0 Package TO-252 TO-251 TO-220 Packi ng 2.5Kpcs/ 13” Reel 80pc s / T ube 50pc s / T ube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (D iode Conduc tion) a,b Symbol VDS VGS ID IDM IS EAS PD TJ TJ, TSTG Limit 600 ± 30 2 9 1 20 2.5 54 +1 5 0 - 55 t o + 150 Unit V V A A A mJ W o o Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH , RG=25Ω) Maximum Power Dissipation @ Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o TO-251 / TO-252 TO-220 C C 1/ 8 Version: A07 T S M2 N 6 0 600V N-Channel Power MOSFET Thermal Performance Parameter TO-251 / TO-252 Thermal R esistance - Junction to Case TO-220 TO-251 / TO-252 Thermal R esistance - Junction to Ambient TO-220 Notes: Surface mounted on FR4 board t ≤ 10sec Symbol R ӨJ C R ӨJ A Limit 2.87 2.32 110 62.5 Unit o C/W C/W o Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditi ons Symbol Mi n 600 -2.0 --------------- Ty p -----5 -13 2 6 435 56 9.2 12 21 30 24 Max -4.4 4.0 10 ± 100 -1.6 22 ---------- Unit V Ω V uA nA S V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State R esistance VGS = 10V, ID = 1A RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS Gate Body Leakage VGS = ±20V, VDS = 0V IGSS Forward Transconduc tance VDS = 40V, ID = 1A gf s Diode Forward Voltage IS = 2A, VGS = 0V VSD b Dynamic Total Gate Charge Qg VDS = 400V, ID = 2A, Gate- Source Charge Qgs VGS = 10V Gate-Drain C harge Qgd Input Capacitance Ciss VDS = 25V, VGS = 0V, Output Capacitance Coss f = 1.0MHz Reverse Trans fer C apacitance Crss c Switching Turn-On Delay Time td(on) VGS = 10V, ID = 2A, Turn-On Rise Time tr VDD = 300V, RG = 18Ω Turn-Off Delay Time td(off) Turn-Off Fall Time tf Notes: a. Pulse test: pulse w idth