TSM2N7000

T S M2 N 7 0 0 0 60V N-Channel MOSFET SOT-92 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V ID (mA) 500 Features ● ● Fast Sw itching Speed Low Input and Output Leakage Block Diagram Application ● ● Direct Logic-Level Interface: TTL/C MOS Solid-State R elays Ordering Information Part No. TSM2N7000CT B0 TSM2N7000CT A3 Package TO-92 TO-92 Packi ng 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (D iode Conduc tion) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 60 ± 20 200 500 500 350 280 +1 5 0 - 55 t o + 150 Unit V V mA mA mA mW o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Ther mal Resis tance (PC B mounted) Notes: a. Pulse width limited by the Maximum junction temper ature b. Sur face Mounted on FR4 Board, t ≤ 5 sec. Symbol TL R ӨJ A Limit 10 357 Unit S o C/W 1/ 4 Version: A07 T S M2 N 7 0 0 0 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic b Conditi ons VGS = 0V, ID = 10µ A VDS = VGS, ID = 1mA VGS = ±15V, VDS = 0V VDS = 48V, VGS = 0V VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA VDS = 15V, ID = 300mA IS = 200mA, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS RDS(ON) gf s VSD Ciss Coss Crss tr tf Mi n 60 0.8 ------------ Ty p -----7.5 320 1.3 60 25 5 10 10 Max -3.0 ± 10 1.0 5.0 --1.5 ----- Unit V V nA µA Ω mS V Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching c VDS = 25V, VGS = 0V, f = 1.0MHz pF Turn-On Rise Time Turn-Off Fall Time VDD = 15V, RL = 30Ω, ID = 500mA, nS -- VGEN = 10V, RG = 25Ω Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature. 2/ 4 Version: A07 T S M2 N 7 0 0 0 60V N-Channel MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30( typ) 0.563( typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 3/ 4 Version: A07 T S M2 N 7 0 0 0 60V N-Channel MOSFET Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these produc ts for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/ 4 Version: A07