TSM2N7000
60V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 60V
ID = 200mA
RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω
General Description
The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package
Ordering Information
Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage --- Continuous --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta > 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG
o o
Symbol
VDS VDGR VGS VGSM ID IDM PD
Limit
60 60 ± 20 ± 40 200 500 350 2.8 +150 - 55 to +150
Unit
V V V
mA mA mW mW/ oC
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance
Symbol
TL Rθja
Limit
10 357
Unit
S
o
C/W
TSM2N7000
1-3
2003/12 rev. A
Electrical Characteristics
Tj = 25 oC unless otherwise noted
Parameter Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance *
Conditions
VGS = 0V, ID = 10uA VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA
Symbol
Min
60 ---0.8 --60
Typ
--7.5 ------
Max
-5.0 -2.5 3.0 1.0 - 10 --
Unit
V Ω
BVDSS RDS(ON) RDS(ON) VDS(ON) VGS(TH) IDSS IGSS ID(ON)
Drain-Source On-Voltage * Gate Threshold Voltage * Zero Gate Voltage Drain Current Gate Body Leakage - Forward On-State Drain Current
VGS = 0V, ID = 10uA VDS = VGS, ID = 1.0mA VDS = 48V, VGS = 0V VGS = 15V, VDS = 0V VDS 5V, VGS = 10V
V V uA nA mA
Dynamic
Turn-On Rise Time * Turn-Off Fall Time * Input Capacitance Output Capacitance Reverse Transfer Capacitance VDD = 15V, RL = 30Ω, ID = 500mA, VGEN = 10V, RG = 25Ω VDS = 25V, VGS = 0V, f = 1.0MHz tr tf Ciss Coss Crss -----10 10 60 25 5 -----pF nS
Source-Drain Diode
Max. Diode Forward Current Diode Forward Voltage IS = 200mA, VGS = 0V IS VSD ---1.3 500 1.5 mA V
* Note : pulse test: pulse width
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