TSM2N7000KCTA3

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: 1. Source 2. Gate 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V 5.5 @ VGS = 5V ID (mA) 100 100 Features ● ● ● ● Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Block Diagram Ordering Information Part No. TSM2N7000KCT B0 TSM2N7000KCT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous @ TA=25ºC Pulsed Continuous @ TA=25ºC Pulsed Symbol VDS VGS ID IDM I DR IDMR PD TJ TJ, TSTG Limit 60 ±20 300 700 300 700 400 +150 -55 to +150 Unit V V mA Drain Reverse Current Maximum Power Dissipation Operating Junction Temperature mA mW o o C C Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol TL RӨJA Limit 10 357 Unit S ºC/W 1/5 Version: A09 TSM2N7000K 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 10µA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V VGS = 10V, ID = 100mA VGS = 5V, ID = 100mA VDS = 10V, ID = 200mA IS = 300mA, VGS = 0V VDS = 10V, ID = 250mA, VGS = 4.5V VDS = 25V, VGS = 0V, f = 1.0MHz Symbol BVDSS VGS(TH) IGSS IDSS RDS(ON) gfs VSD Min 60 1.0 ----100 -- Typ ----3 3.6 -0.9 Max -2.5 ±10 1.0 5 5.5 -1 .2 Unit V V uA uA Ω mS V Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c Qg Ciss Coss Crss td(on) ------- 0.4 7.32 3.42 7.63 25 35 ------- nC pF Turn-On Delay Time VDD = 30V, RG = 10Ω ID = 100mA, VGEN = 10V, Turn-Off Delay Time td(off) Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. nS 2/5 Version: A09 TSM2N7000K 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Forward Transfer Admittance vs. Drain Current On-Resistance vs. Gate-Source Voltage Power Derating Curve 3/5 Version: A09 TSM2N7000K 60V N-Channel MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 4/5 Version: A09 TSM2N7000K 60V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A09