TSM2N7002ECU

T S M2 N 7 0 0 2 E 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 3 @ VGS = 10V 4 @ VGS = 4.5V ID (mA) 300 200 Features ● ● Low On-Resistance: 3Ω Low Input and Output Leakage Block Diagram Application ● ● Direct Logic-Level Interface: TTL/C MOS Solid-State R elays Ordering Information Part No. TSM2N7002EC X R F TSM2N7002ECU RF Package SOT-23 SOT-323 Packi ng 3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (D iode Conduc tion) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 60 ± 20 300 1 300 350 220 +1 5 0 - 55 t o + 150 Unit V V mA A mA mW o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Ther mal Resis tance (PC B mounted) Symbol TL R ӨJ A Limit 5 357 Unit S o C/W Notes: a. Pulse width limited by the Maximum junction temper ature b. Sur face Mounted on FR4 Board, t ≤ 5 sec. c. The power dissipation of the package may result in a continuous drain current. 1/ 7 Version: A07 T S M2 N 7 0 0 2 E 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic b Conditi ons VGS = 0V, ID = 10µ A VDS = VGS, ID = 250µ A VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V VGS = 10V, VDS = 7.5V VGS = 4.5V, VDS = 10V VGS = 10V, ID = 300mA VGS = 4.5V, ID = 200mA VDS = 15V, ID = 300mA IS = 300mA, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gf s VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Mi n 60 1.0 --800 500 --------------- Ty p ----1300 700 1.9 2.7 320 0.9 0.4 0.06 0.06 20 11 4 7.5 6 7.5 3 Max -2.5 ± 100 1.0 --3 4 -1.2 0.6 --50 25 5 20 -20 -- Unit V V nA µA mA Ω mS V Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching c VDS = 10V, ID = 250mA, VGS = 4.5V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 30V, ID = 100mA, VGEN = 10V, nS R G = 10Ω Turn-Off Fall Time tf Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature. 2/ 7 Version: A07 T S M2 N 7 0 0 2 E 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output C haracterist ics Transf er C haracteristics On-Resistance vs. Drain Current Gate C harge On-Resistance vs. Junct ion Temperature Source-Drain D iode Forward Voltage 3/ 7 Version: A07 T S M2 N 7 0 0 2 E 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate- Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/ 7 Version: A07 T S M2 N 7 0 0 2 E 60V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETER S INCH ES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram 2E = Device Code Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov , L=Dec) L = Lo t C ode 5/ 7 Version: A07 T S M2 N 7 0 0 2 E 60V N-Channel MOSFET SOT-323 Mechanical Drawing DIM A A1 bp C D E e e1 He Lp Q W Θ SOT-323 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 0.80 1.10 0.0315 0.0433 -0.10 -0.0039 0.30 0.40 0.0118 0.0157 0.10 0.25 0.0039 0.0098 1.80 2.20 0.0709 0.0866 1.15 1.35 0.0453 0.0531 1.30 -0.0512 -0.65 -0.0256 -2.00 2.20 0.0787 0.0866 0.15 0.45 0.0059 0.0177 0.13 0.23 0.0051 0.0091 0.20 -0.0079 -o o 10 -10 -- Marking Diagram 2E = Device Code Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov , L=Dec) L = Lo t C ode 6/ 7 Version: A07 T S M2 N 7 0 0 2 E 60V N-Channel MOSFET Notice Specifications of the produc ts displayed herein are s ubject to change without notice. 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