TSM2N7002K
60V N-Channel MOSFET
SOT-23 SOT-323
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)( )
60 2 @ VGS = 10V 4 @ VGS = 4.5V
ID (mA)
300 200
Features
● ● ● ● Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive
Block Diagram
Ordering Information
Part No.
TSM2N7002KCX RF TSM2N7002KCX RFG TSM2N7002KCU RF TSM2N7002KCU RFG
Package
SOT-23 SOT-23 SOT-323 SOT-323
Packing
3Kpcs / 7” Reel 3Kpcs / 7” Reel 3Kpcs / 7” Reel 3Kpcs / 7” Reel
N-Channel MOSFET
Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous @ TA=25ºC Pulsed Drain Reverse Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Continuous @ TA=25ºC Pulsed
Symbol
VDS VGS ID IDM IDR IDMR PD TJ TJ, TSTG
Limit
60 ±20 300
Unit
V V mA
800 300 mA 800 300 +150 -55 to +150 mW
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
TL RӨJA
Limit
5 350
Unit
S
o
C/W
Notes: a. Pulse width ≤300us, Duty cycle ≤2% b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch. c. The power dissipation of the package may result in a continuous drain current.
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Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS =0V, ID =250µA VDS =VGS, ID =250µA VGS =±20V, VDS =0V VDS =60V, VGS =0V VGS =10V, ID =300mA VGS =4.5V, ID =100mA VDS =10V, ID =200mA IS =300mA, VGS =0V VDS =10V, ID = 250mA, VGS =4.5V VDS = 25V, VGS = 0V, f = 1.0MHz
Symbol
BVDSS VGS(TH) IGSS IDSS RDS(ON) gfs VSD
Min
60 1.0 ----100 --
Typ
-1.5 --1.2 2 -0.8
Max
-2.5 ±10 1.0 2 4 -1.4
Unit
V V uA uA
mS V
Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
Qg Ciss Coss Crss td(on)
-------
0.4 30 6 2.5 ---
0.6 ---25 35
nC
pF
Turn-On Delay Time
VDD =30V, RG =10
ID =200mA, VGEN =10V, Turn-Off Delay Time td(off) Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.
nS
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Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Version: C11
TSM2N7002K
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM A A1 bp C D E e e1 HE LP Q V W
SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 1.00 BSC 0.039 BSC -0.10 -0.004 0.37 0.42 0.014 0.016 0.15 0.09 0.005 0.004 2.80 3.00 0.118 0.110 1.20 1.40 0.047 0.055 1.9 BSC 0.075 BSC 0.95 BSC 0.037 BSC 2.35 2.45 0.093 0.096 0.15 0.45 0.005 0.018 0.022 0.45 0.55 0.018 0.2 BSC 0.007 BSC 0.1 BSC 0.004 BSC
Marking Diagram
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Version: C11
TSM2N7002K
60V N-Channel MOSFET
SOT-323 Mechanical Drawing
DIM A A1 bp C D E e e1 HE Lp Q W
SOT-323 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.031 0.043 -0.10 -0.004 0.30 0.40 0.012 0.016 0.10 0.25 0.004 0.010 1.80 2.20 0.071 0.087 1.15 1.35 0.045 0.053 1.30 BSC 0.051 BSC 0.65 BSC 0.026 BSC 2.00 2.20 0.079 0.087 0.15 0.45 0.006 0.018 0.20 BSC 0.007 BSC 0.20 BSC 0.007 BSC
Marking Diagram
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Version: C11
TSM2N7002K
60V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: C11
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