TSM2N7002K_11

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)( ) 60 2 @ VGS = 10V 4 @ VGS = 4.5V ID (mA) 300 200 Features ● ● ● ● Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Block Diagram Ordering Information Part No. TSM2N7002KCX RF TSM2N7002KCX RFG TSM2N7002KCU RF TSM2N7002KCU RFG Package SOT-23 SOT-23 SOT-323 SOT-323 Packing 3Kpcs / 7” Reel 3Kpcs / 7” Reel 3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous @ TA=25ºC Pulsed Drain Reverse Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Continuous @ TA=25ºC Pulsed Symbol VDS VGS ID IDM IDR IDMR PD TJ TJ, TSTG Limit 60 ±20 300 Unit V V mA 800 300 mA 800 300 +150 -55 to +150 mW o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Symbol TL RӨJA Limit 5 350 Unit S o C/W Notes: a. Pulse width ≤300us, Duty cycle ≤2% b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch. c. The power dissipation of the package may result in a continuous drain current. 1/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS =0V, ID =250µA VDS =VGS, ID =250µA VGS =±20V, VDS =0V VDS =60V, VGS =0V VGS =10V, ID =300mA VGS =4.5V, ID =100mA VDS =10V, ID =200mA IS =300mA, VGS =0V VDS =10V, ID = 250mA, VGS =4.5V VDS = 25V, VGS = 0V, f = 1.0MHz Symbol BVDSS VGS(TH) IGSS IDSS RDS(ON) gfs VSD Min 60 1.0 ----100 -- Typ -1.5 --1.2 2 -0.8 Max -2.5 ±10 1.0 2 4 -1.4 Unit V V uA uA mS V Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c Qg Ciss Coss Crss td(on) ------- 0.4 30 6 2.5 --- 0.6 ---25 35 nC pF Turn-On Delay Time VDD =30V, RG =10 ID =200mA, VGEN =10V, Turn-Off Delay Time td(off) Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. nS 2/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 bp C D E e e1 HE LP Q V W SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 1.00 BSC 0.039 BSC -0.10 -0.004 0.37 0.42 0.014 0.016 0.15 0.09 0.005 0.004 2.80 3.00 0.118 0.110 1.20 1.40 0.047 0.055 1.9 BSC 0.075 BSC 0.95 BSC 0.037 BSC 2.35 2.45 0.093 0.096 0.15 0.45 0.005 0.018 0.022 0.45 0.55 0.018 0.2 BSC 0.007 BSC 0.1 BSC 0.004 BSC Marking Diagram 5/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET SOT-323 Mechanical Drawing DIM A A1 bp C D E e e1 HE Lp Q W SOT-323 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.031 0.043 -0.10 -0.004 0.30 0.40 0.012 0.016 0.10 0.25 0.004 0.010 1.80 2.20 0.071 0.087 1.15 1.35 0.045 0.053 1.30 BSC 0.051 BSC 0.65 BSC 0.026 BSC 2.00 2.20 0.079 0.087 0.15 0.45 0.006 0.018 0.20 BSC 0.007 BSC 0.20 BSC 0.007 BSC Marking Diagram 6/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: C11