TSM2N70CHC5

Preliminary TSM2N70 700V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 700 RDS(on)(Ω) 7 @ VGS =10V ID (A) 0.8 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● ● Low RDS(ON) 7Ω (Max.) Low gate charge typical @ 11.4nC (Typ.) Low Crss typical @ 6.5pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM2N70CH C5 TSM2N70CP RO Package TO-252 TO-251 Packing 70pcs / Tube 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Avalanche Current (Single) (Note 2) Single Pulse Avalanche Energy (Note 2) Maximum Power Dissipation @TC = 25 C Peak Diode Recovery Voltage Slope (Note 2) Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature o Symbol VDS VGS ID IDM IAS EAS PD dv/dt TJ TSTG Limit 700 ±30 1.6 6.4 1.6 110 45 4.5 150 -55 to +150 Unit V V A A A mJ W V/ns ºC o C 1/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 2.78 100 Unit o o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 1mA VGS = 10V, ID = 0.8A VDS = VGS, ID = 50uA VDS = 700V, VGS = 0V VGS = ±20V, VDS = 0V VDS = 15V, ID = 0.8A IS = 1.6A, VGS = 0V Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) Min 700 -3.0 ------------------ Typ -6 ---1.4 1.6 11.4 2 6.8 280 35 6.5 7 17 20 35 334 918 5.5 Max -7 4.5 1 ±10 ---------------- Unit V Ω V uA nA S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 560V, ID = 0.8A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 13A, VDD = 50V VGS = 10V, ID = 0.8A, VDD = 350V, RG = 4.7Ω tr td(off) tf t fr Q fr nS nS uC A dIF/dt = 100A/us Reverse Recovery Current IRRM Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=13A, L=8mH, RG=25Ω 3. Pulse test: pulse width ≤300uS, duty cycle ≤1.5% 4. Essentially Independent of Operating Temperature 5. For design reference only, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET SOT-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.3BSC 0.09BSC 4.6BSC 0.18BSC 6.80 7.20 0.268 0.283 5.40 5.60 0.213 0.220 6.40 6.65 0.252 0.262 2.20 2.40 0.087 0.094 0.00 0.20 0.000 0.008 5.20 5.40 0.205 0.213 0.75 0.85 0.030 0.033 0.55 0.65 0.022 0.026 0.35 0.65 0.014 0.026 0.90 1.50 0.035 0.059 2.20 2.80 0.087 0.110 0.50 1.10 0.020 0.043 0.90 1.50 0.035 0.059 1.30 1.70 0.051 0.67 5/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET SOT-251 Mechanical Drawing DIM A A1 b b1 b2 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.19 2.38 0.086 0.094 0.89 1.14 0.035 0.045 0.64 0.89 0.025 0.035 0.76 1.14 0.030 0.045 5.21 5.46 0.205 0.215 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.10 0.235 0.240 6.35 6.73 0.250 0.265 2.28 BSC. 0.90 BSC. 8.89 9.65 0.350 0.380 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 6/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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