TSM2N70_11

TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 700 RDS(on)( ) 6.5 @ VGS =10V ID (A) 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● ● Low RDS(ON) 6.5 (Max.) Low gate charge typical @ 9.5nC (Typ.) Low Crss typical @ 4.5pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM2N70CZ C0 TSM2N70CH C5 TSM2N70CH C5G TSM2N70CP RO TSM2N70CP ROG Package TO-220 TO-251 TO-251 TO-252 TO-252 Packing 50pcs / Tube 70pcs / Tube 70pcs / Tube 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel N-Channel MOSFET Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Repetitive avalanche Current Single Pulse Avalanche Energy (Note 2) o Maximum Power Dissipation @TC = 25 C Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature Symbol VDS VGS ID IDM IAR EAS PTOT TJ TSTG Limit 700 ±30 2 8 2 110 45 150 -55 to +150 Unit V V A A A mJ W ºC o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 2.78 100 Unit o o C/W C/W 1/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 1mA VGS = 10V, ID = 1A VDS = VGS, ID = 50uA VDS = 700V, VGS = 0V VGS = ±20V, VDS = 0V VDS = 15V, ID = 0.8A IS = 1.6A, VGS = 0V Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) Min 700 -2 ------------------ Typ -5.25 ---1.7 -9.5 1.6 4.0 320 35 4.5 18.4 35 32 34 474.2 2067.8 5.16 Max -6.5 4 1 ±100 -1.6 13 ------------- Unit V V uA nA S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 480V, ID = 2A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 1.3A, VDD = 25V VGS = 10V, ID = 0.8A, VDD = 350V, RG = 4.7 tr td(off) tf tfr Qfr nS nS uC A dIF/dt = 100A/us Reverse Recovery Current IRRM Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=2A, L=56mH, RG=25 3. Pulse test: pulse width ≤300uS, duty cycle ≤1.5% 4. Essentially Independent of Operating Temperature 5. For design reference only, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 5/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 6/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 9/10 Version: B11 TSM2N70 700V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: B11