TSM2NB60
600V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
600
RDS(on)( )
4.4 @ VGS =10V
ID (A)
1
General Description
TO-251 (IPAK) TO-252 (DPAK) The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
● ● ● ● Low RDS(ON) 3.9 (Typ.) Low gate charge typical @ 9.5nC (Typ.) Low Crss typical @ 5pF (Typ.) 100% Avalanche Tested
Block Diagram
Ordering Information
Part No.
TSM2NB60CH C5G TSM2NB60CP ROG TSM2NB60CZ C0
Package
TO-251 TO-252 TO-220
Packing
75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET
TSM2NB60CI C0 ITO-220 Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature
o
Symbol
VDS VGS Tc = 25ºC Tc = 100ºC ID IDM EAS IAR EAR dv/dt PTOT TJ TSTG
Limit
IPAK/DPAK ITO-220 600 ±30 2 1.35 8 39 2 4.4 4.5 44 25 150 -55 to +150 70 TO-220
Unit
V V A A A mJ A mJ V/ns W ºC
o
C
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Version: B11
TSM2NB60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient
Symbol
RӨJC RӨJA
Limit
IPAK/DPAK 2.87 110 ITO-220 5 62.5 TO-220 1.78 62.5
Unit
o o
C/W C/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source Current Source Current (Pulse) Diode Forward Voltage Reverse Recovery Time VGS = 10V, ID = 2A, VDD = 300V, RG =25 (Note 4,5) td(on) tr td(off) tf IS ISM VSD tfr --------9.1 9.8 17.4 12.4 --0.9 490 0.8 ----2 8 1.4 --A A V nS uC nS VDS = 480V, ID = 2A, VGS = 10V (Note 4,5) VDS = 25V, VGS = 0V, f = 1.0MHz Qg Qgs Qgd Ciss Coss Crss ------9.4 2.2 4.7 249 30.7 5 ------pF nC VGS = 0V, ID = 250uA VGS = 10V, ID = 1A VDS = VGS, ID = 250uA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 40V, ID = 1A BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs 600 -2.5 ----3.9 3.6 --1.5 -4.4 4.5 10 ±100 -V uA nA S V
Conditions
Symbol
Min
Typ
Max
Unit
Source-Drain Diode Ratings and Characteristic Integral reverse diode in the MOSFET IS = 2A, VGS = 0V VGS = 0V, IS =2A,
dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=2A, L=18mH, RG =25 , Starting TJ=25ºC Note 3: ISD≤2A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature
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TSM2NB60
600V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
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TSM2NB60
600V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
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TSM2NB60
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
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Version: B11
TSM2NB60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM A B C D E F G H J K L M N O P
TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
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TSM2NB60
600V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
DIM A B C D E F G H I J K L M N O
ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
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TSM2NB60
600V N-Channel Power MOSFET
TO-251 Mechanical Drawing
DIM A b b1 b2 b3 C C1 D E e L L1 L2 L3
TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.083 0.098 2.10 2.50 0.026 0.041 0.65 1.05 0.023 0.024 0.58 0.62 0.189 0.205 4.80 5.20 0.027 0.028 0.68 0.72 0.014 0.026 0.35 0.65 0.016 0.024 0.40 0.60 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 2.30 BSC 7.00 8.00 1.40 1.80 1.30 1.70 0.50 0.90 0.09 BSC 0.276 0.315 0.055 0.071 0.051 0.067 0.020 0.035
Marking Diagram
Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
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Version: B11
TSM2NB60
600V N-Channel Power MOSFET
TO-252 Mechanical Drawing
DIM A B C D E F G G1 H H1 J K L M
TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.30 BSC 0.090 BSC 0.402 0.425 10.20 10.80 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 0.083 0.098 2.10 2.50 0.000 0.008 0.00 0.20 0.189 0.205 4.80 5.20 0.016 0.031 0.40 0.80 0.016 0.024 0.40 0.60 0.014 0.026 0.35 0.65 0.132 0.144 3.35 3.65 0.020 0.043 0.50 1.10 0.035 0.059 0.90 1.50 0.051 0.067 1.30 1.70
Marking Diagram
Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
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TSM2NB60
600V N-Channel Power MOSFET
Notice
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Version: B11