TSM3400CXRF

TSM3400CXRF

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM3400CXRF - 30V N-Channel MOSFET - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSM3400CXRF 数据手册
TSM3400 30V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 28 @ VGS = 10V 30 33 @ VGS = 4.5V 52 @ VGS = 2.5V ID (A) 5.8 5.0 4.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM3400CX RF Package SOT-23 Packing 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation @ Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o a,b Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Limit 30 ±12 5.8 30 2.5 1.4 +150 -55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Foot Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol R Ө JF RӨJA Limit 70 90 Unit o o C/W C/W 1/1 Version: A09 TSM3400 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±12V, VDS = 0V VDS = 24V, VGS = 0V VDS = 5V, VGS = 4.5V VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4A VDS = 5V, ID = 5A IS = 1.0A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min 30 0.7 --20 ---10 ------------ Typ -----23 28 43 15 0.76 9.7 1.63 3.1 857 97 71 3.3 4.7 26 4.1 Max -1.4 ±100 1.0 -28 33 52 -1.0 12 --1030 --5 7 39 6.2 Unit V V nA µA A mΩ S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 15V, ID = 5.8A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 1.8Ω, ID = 1A, VGEN = 10V, nS RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/2 Version: A09 TSM3400 30V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/3 Version: A09 TSM3400 30V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/4 Version: A09 TSM3400 30V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram 40 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/5 Version: A09 TSM3400 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A09
TSM3400CXRF
1. 物料型号: - 型号为TSM3400CX RF。

2. 器件简介: - TSM3400是一款30V N-Channel MOSFET,采用先进的沟槽工艺技术和高密度单元设计,以实现超低导通电阻。

3. 引脚分配: - 1号引脚为栅极(Gate)。 - 2号引脚为源极(Source)。 - 3号引脚为漏极(Drain)。

4. 参数特性: - 漏源电压(VDs):30V。 - 栅源电压(VGS):±12V。 - 连续漏电流(ID):5.8A(@VGs = 10V),5.0A(@VGs = 4.5V),4.0A(@VGs = 2.5V)。 - 脉冲漏电流(IDM):30A。 - 连续源电流(Is):2.5A。 - 最大耗散功率(PD):1.4W。 - 工作结温(TJ):+150°C。 - 工作结温和存储温度范围(TJ, TSTG):-55 to +150°C。

5. 功能详解: - 该MOSFET具有高密度单元设计,用于超低导通电阻,适用于负载开关和功率放大器开关等应用。

6. 应用信息: - 适用于负载开关(Load Switch)和功率放大器开关(PA Switch)。

7. 封装信息: - 封装类型为SOT-23,每卷7英寸包含3Kpcs。
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