TSM3401CX

TSM3401 -30V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 30V RDS (on), Vgs @ - 4.5V, Ids @ - 2A =100mΩ RDS (on), Vgs @ - 10V, Ids @ - 3A =75mΩ Features Rugged and reliable High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM3401CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit - 30V ± 20 -3 - 10 1.25 0.8 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t