TSM3424
30V N-Channel MOSFET
SOT-26
Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source
PRODUCT SUMMARY VDS (V) RDS(on)(m )
30 30 @ VGS = 10V 42 @ VGS = 4.5V
ID (A)
6.7 5.7
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Load Switch PA Switch
Ordering Information
Part No.
TSM3424CX6 RF TSM3424CX6 RFG
Package
SOT-26 SOT-26
Packing
3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
30 ±20 6.7 30 1.7 2.0
Unit
V V A A A W
1.3 +150 -55 to +150
o o
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RӨJC RӨJA
Limit
30 80
Unit
o o
C/W C/W
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Version: C11
TSM3424
30V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static
a
Conditions
VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 24V, VGS = 0V VDS ≥ 5V, VGS = 10V VGS = 10V, ID = 6.7A VGS = 4.5V, ID = 5.7A VDS = 5V, ID = 5.0A IS = 1.7A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
30 1 --30 ---------------
Typ
-1.4 ---23 32 14 0.76 4.52 1.24 1.68 400.96 100.47 71.82 7.42 3.41 20.4 3.01
Max
-3 ±100 1.0 -30 42 -1 -----------
Unit
V V µA µA A m S V
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 15V, ID = 6.7A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 15V, RL = 2.2 , ID = 1A, VGEN = 10V, RG = 6
nS
Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.
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Version: C11
TSM3424
30V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: C11
TSM3424
30V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Version: C11
TSM3424
30V N-Channel MOSFET
SOT-26 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-26 DIMENSION MILLIMETERS INCHES MIN MIN TYP MAX TYP 0.95 BSC 1.9 BSC 2.60 1.40 2.80 1.00 0.00 0.35 0.10 0.30 5º 2.80 1.50 2.90 1.10 -0.40 0.15 --3.00 1.70 3.10 1.20 0.10 0.50 0.20 0.60 10º 0.0374 BSC
MAX
0.0748 BSC 0.1024 0.1102 0.1181 0.0551 0.1101 0.0394 0.00 0.0138 0.0039 0.0118 5º 0.0157 0.0059 --0.0591 0.1142 0.0433 0.0669 0.1220 0.0472 0.0039 0.0197 0.0079 0.0236 10º
Marking Diagram
24 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
5/6
Version: C11
TSM3424
30V N-Channel MOSFET
Notice
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Version: C11
