TSM3441

TSM3441 -20V P-Channel Enhancement-Mode MOSFET SOT-26 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = -20V RDS (on), Vgs @ -4.5V, Ids @ -3A =100mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =150mΩ Features     Advanced trench process technology High density cell design for ultra low on-resistance Fully Characterized Avalanche Voltage and Curren t Improved Shoot-Through FO M Block Diagram P-C hannel MOSFET Ordering Information Part No . T S M3 4 4 1 C X 6 Packing T a p e & Re e l 3,000/per reel Pa c k a ge SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu rrent, Pulsed Drain Current, Maximum Power Dissipation Operating Junction Tempera ture Operating Junction and S torage Temperatu re Range Ta = 25 C Ta = 70 C o o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit -20V ±8 -3 -10 2 1.3 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain ) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t