TSM3461CX5

TSM3461CX5 20V N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 5. Drain 2. Drain 3. Gate 4. Source VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =35mΩ (typ.) Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM3461CX5 RF Packing Tape & Reel 3,000/per reel Package SOT-25 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Ta = 25 C Ta = 70 oC Pulsed Drain Current, VGS @4.5V Diode Forward Current Maximum Power Dissipation Ta = 25 oC Ta = 70 oC Operating Junction and Storage Temperature Range TJ, TSTG o Symbol VDS VGS ID ID IDM Is PD Limit 20V ± 12 6 5 30 1.5 1.3 0.96 - 55 to +150 Unit V V A A A A W o C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t= 5V VDS = 10V, ID = 6A VDS = 10V, ID = 6A, VGS = 4.5V VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω VDS = 10V, VGS = 0V, f = 1.0MHz o Symbol Min 20 ---0.5 ---30 -------------- Typ -25 40 35 0.85 ----30 15.5 2 3.5 75 125 600 300 1336 220 130 -0.6 Max -30 50 45 -1.0 25 ± 100 --30 --100 150 720 360 ---1.5 1.2 Unit V mΩ mΩ V uA nA A S BVDSS 25 oC 60 oC RDS(ON) RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS Dynamic * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.5A, VGS = 0V A V VSD nC nS pF Note : * for design only, not subject to production tested. pulse test: pulse width