TSM414K34CSRL

Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 Pin Definition: 1. Anode 8. Cathode 2. Anode 7. Cathode 3. Source 6. Drain 4. Gate 5. Drain MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 55 @ VGS = 10V 65 @ VGS = 4.5V ID (A) 4 2 SCHOTTKY PRODUCT SUMMARY VRRM (V) VF (V) 30 0.51 IF (A) 3 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM414K34CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET with Schottky Diode MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current, a,b Continuous Source Current (Diode Conduction) o Maximum Power Dissipation @ Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD Limit 30 ±20 4 20 4 2 +150 -55 ~ +150 Unit V V A A A W o o TJ TJ, TSTG C C Schottky Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Drain-Source Voltage Average Forward Current Non-Peak Repetitive Surge Current c VRRM IF IFSM 30 3 20 o V A A Thermal Performance Junction to Ambient Thermal Resistance RӨJA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 10 sec. C. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz. 62.5 C/W 1 /4 Version: Preliminary Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Conditions VGS = 0V, ID = 250uA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 24V, VGS = 0V VDS ≥ 5V, VGS = 10V VGS = 10V, ID = 4A VGS = 4.5V, ID = 2A VDS = 5V, ID = 4A IS = 4A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Min 30 1 --30 --------------- Typ -1.4 ---30 40 20 1 13 4.2 3.1 610 100 77 9.1 16.5 23 3.5 Max -3 ±100 1.0 -45 55 -1 .2 ----------- Unit V V nA µA A mΩ S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b a Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 15V, ID = 4A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 6Ω nS Schottky Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Forward Voltage Drop Reverse Leakage Current Voltage Rate of Charge IF = 3 A VR = 30V, Ta = 25 C VR = 30V, Ta = 100 C VR = 30V o o Conditions Symbol VFM IR dv/dt Min ----- Typ ---10000 Max 0.51 0.05 18 -- Unit V mA V/us Notes: a. Pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2 /4 Version: Preliminary Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 Mechanical Drawing DIM A B C D F G K M P R SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 3 /4 Version: Preliminary Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4 /4 Version: Preliminary