TSM4405P

TSM4405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET Lateral Power™ for Load Switching and PA Switch VDS = - 12V RDS (on), Vgs @ - 4.5V, Ids @ - 4.9A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ S S D G Patent Pending Description Bump Side View TSM4405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit. Features Low profile package: less than 0.8mm height when mounted on PCB Occupies only 1.21mm of PCB area 2 Less than 30% of the area of a SC-70 Excellent thermal and electrical capabilities Lead free solder bumps available Block Diagram Ordering Information Part No. TSM4405P Packing Tape & Reel Q’ty 3kpcs / 7” Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation (Steady State) Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit - 12V ±8 - 4.9 - 10 1. 5 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance Junction to Balls Thermal Resistance Symbol Rθja RθjR Limit 85 20 Unit o o C/W C/W TSM4405P 1-6 2003/10 rev. F Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = - 250uA VGS = - 4.5V, ID = -1.0A VGS = - 2.5V, ID = -1.0A VGS = - 1.8V, ID = -1.0A BVDSS RDS(ON) ----- ----- 0.7 ---- -12 55 70 90 -- 1.0 - 5.0 ± 100 V mΩ Gate Threshold Voltage Zero Gate Voltage Drain Current VDS = VGS, ID = - 250uA VDS =-12V, VGS = 0V Ta=25 C Ta=70 C o o VGS(TH) IDSS ---- V uA Gate Body Leakage VGS = ± 8V, VDS = 0V IGSS -- nA Dynamic Total Gate Charge VDS = - 6V, ID = - 1.0A, VGS = - 4.5V Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Source-Drain Reverse Recovery Time IS = - 1.0A, VGS = 0V IS = - 1.0A, VGS = 0V, di / dt = 100A / uS IS VSD Trr ----- 0.7.1 40 - 1.0 - 1.2 -A V nS VDS = - 12V, VGS = 0V, f = 1.0MHz Ciss Coss Crss ---800 250 100 ---pF Qg -9.0 -nC Note : pulse test: pulse width