TSM4410

TSM4410 Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7 , 8. Drain Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 1 0 A RDS (on), Vgs @ 10V, Ids @ 10A = 13.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 8A = 20mΩ Features  Advanced trench process technology High Density Cell Design for U ltra Low On-Resistance Fully Characterized Avalanche Voltage and Curren t   Block Diagram Ordering Information Part No . T S M4 4 1 0 C S Packing Pa c k a ge SOP-8 Tape & Reel (2,500pcs / Reel) Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu rrent Pulsed Drain Current Maximum Power Dissipation Operating Junction Tempera ture Operating Junction and S torage Temperatu re Range TA = 25 C TA = 70 C o o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 25 ±20 10 50 2 1.3 +150 -55 to +150 Unit V V A W o o C C Thermal Performance Parameter Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current lim ited by the package 2 2. 1 -in 2oz Cu P CB board Symbol Rθjc Rθja Limit 2.2 50 Unit o C/W TSM4410 1 -3 2006/06 rev. A Electrical Characteristics TJ = 25 C, unless otherwise noted o Parameter Static Drain-Source B reakdown Voltage Drain-Source On -State Resistance Gate Threshold Voltage Zero Gate Voltage Dra in Current Gate Body Leakage Gate Resistance Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 10V, ID = 10A VGS = 4.5V, ID = 5A VDS = VGS, ID = 250uA VDS = 25V, VGS = 0V VGS = ±20V , VDS = 0V f = 1 MH z VDS =15V, ID = 10A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS Rg g fs 25 --1.0 ----- -11 16.5 ---1.35 25 -13.5 20 3.0 1.0 ±100 --- V mΩ mΩ V uA nA Ω S Dynamic Total Gate Charge Gate-Source Charge Gate-Dra in Charge Turn-On Delay T ime Turn-On Rise T ime Turn-Off Delay T ime Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V f = 1.0 MHz VDD = 15V, RL = 25Ω, ID = 1A, V GEN = 10V, RG = 6 Ω VDS = 15V, ID = 10A, VGS = 5V Qg Q gs Q gd td(on) tr td(off) tf Ci s s C os s Crss ----------7.56 2.74 2.22 6.81 1.8 20.37 3.42 1046.7 148.75 78.26 ----------pF nS nC Source-Drain D iode Max. Diode Forwa rd Current Diode Forward Voltage IS = 2.3A, V GS = 0V Note: 1. pulse test: pulse wid th