TSM4410DCSRL

TSM4410D Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 Vds = 25V 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 Id = 10A Rds(on), Vgs @ 10V, Ids @ 10A = 21mΩ Rds(on), Vgs @ 4.5V, Ids @ 8A = 15mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Fully characterized avalanche voltage and current Block Diagram Ordering Information Part No. TSM4410DCS RL Packing Tape & Reel 2,500/per reel Package SOP-8 Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range TA = 25 oC TA = 70 C o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 25 ±20 10 50 2.5 1.6 +150 -55 to +150 Unit V V A W o o C C Thermal Performance Parameter Junction-to-Foot Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2. 1-in2 2oz Cu PCB board Symbol RθjF Rθja Limit 22 50 Unit o C/W TSM4410D 1-1 2006/04 rev. A Electrical Characteristics (single channel) TJ = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 4.5V, ID = 8A VGS = 10V, ID = 10A VDS = VGS, ID = 250uA VDS = 25V, VGS = 0V VGS = ± 20V, VDS = 0V VDS =10V, ID = 10A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS gfs 25 --1.0 ---- -13 18 ---15 -15 21 3.0 1.0 ±100 -- V mΩ mΩ V uA nA S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 6Ω VDS = 15V, ID = 10A, VGS = 10V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------15 2.5 3 20 6 49 16 921 208 108 26 ---------pF nS nC Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 3A, VGS = 0V Note: 1. pulse test: pulse width