TSM4415CSRL

Preliminary TSM4415 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5, Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 26 @ VGS = -20V 35 @ VGS = -10V ID (A) -8.0 -8.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram (1,2,3) Application ● ● Load Switch PA Switch (4) Ordering Information Part No. TSM4415CS RL Package SOP-8 Packing 2.5kpcs/13” reel (5,6,7,8) P-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o Symbol VDS VGS ID IDM IS o Limit -30 ±25 -8 -30 -1 Unit V V A A A W o o Ta = 25 C Ta = 70 C PD 3 2.1 +150 - 55 to +150 TJ TJ, TSTG C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJF RӨJA Limit 30 75 Unit o o C/W C/W 1/1 Version: Preliminary Preliminary Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a TSM4415 30V P-Channel MOSFET Conditions VGS = 0V, ID = -250uA VDS = VGS, ID = -250µA VGS = ±20V, VDS = 0V VDS = -24V, VGS = 0V VDS ≥-10V, VGS = -5V VGS = -20V, ID = -8A a Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -30 -1.0 ---6 ---------------- Typ -----21 28 41 11.5 -0.8 18.1 6.5 3.2 1047.9 172.8 115.5 20.5 4.4 42.8 7.3 Max --3.0 ±100 -1.0 -26 35 ---1.0 ----------- Unit V V nA µA A mΩ S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c a VGS = -10V, ID = -8A VGS = -6V, ID = -5A VDS = -5V, ID = -8A IS = -1A, VGS = 0V VDS = -15V, ID = -8A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time tf Turn-Off Fall Time Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. VDD = -15V, RL = 1.8Ω, ID = -1A, VGEN = -10V, R G = 3Ω nS 2/2 Version: Preliminary Preliminary TSM4415 30V P-Channel MOSFET SOP-8 Mechanical Drawing A DIM SOP-8 DIMENSION MILLIMETERS MIN 4.80 3.80 1.35 0.35 0.40 0.10 0º 5.80 0.25 MAX 5.00 4.00 1.75 0.49 1.25 0.25 7º 6.20 0.50 MIN 0.189 0.150 0.054 0.014 0.016 0.004 0º 0.229 0.010 INCHES MAX. 0.196 0.157 0.068 0.019 0.049 0.009 7º 0.244 0.019 16 9 B P A B C D F G R 1 8 G C D K M 1.27BSC 0.05BSC K M F P R 3/3 Version: Preliminary Preliminary TSM4415 30V P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary