Preliminary
TSM4416
30V N-Channel MOSFET
SOP-8
Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7 , 8. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
30 19 @ VGS = 10V 28 @ VGS = 4.5V
ID (A)
8.5 6
Features
● ● Advance Trench Process Technology High D ensity Cell Design for Ultr a Low On-resistance
Block Diagram
Application
● ● Load Switch PW M Application
Ordering Information
Part No.
TSM4416C S RL
Package
SOP-8
Packi ng
2.5Kpcs / 13” Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (D iode Conduc tion) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
30 20 8.5 40 2.6 2.5 1.6 +1 5 0 - 55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Case Thermal R esistance Junction to Ambient Ther mal Resis tance (PC B mounted) Notes: a. Pulse width limited by the Maximum junction temper ature b. Sur face Mounted on FR4 Board, t ≤ 10 sec .
Symbol
R ӨJ F R ӨJ A
Limit
25 50
Unit
o o
C/W
C/W
1/ 4
Version: Preliminary
Preliminary
TSM4416
30V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
a a
Conditi ons
VGS = 0V, ID = 250uA VDS = VGS, ID = 250µ A VGS = ±20V, VDS = 0V VDS = 24V, VGS = 0V VDS ≥ 5V, VGS = 10V VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 6A VDS = 5V, ID = 8.5A IS = 1A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gf s VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Mi n
30 1 --40 ---------------
Ty p
-1.8 ---15.5 23 23 0.71 19 9.36 4.2 1040 180 110 5.2 4.4 17.3 3.3
Max
-3 ± 100 -1.0 -19 28 -1.0 24 12 ---------
Unit
V V nA µA A mΩ S V
Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic
b a
Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching
c
VDS = 15V, ID = 8.5A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 15V, RL = 1.8Ω , ID = 1A, VGEN = 10V,
nS
R G = 3Ω Turn-Off Fall Time tf Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature.
2/ 4
Version: Preliminary
Preliminary
TSM4416
30V N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM A B C D F G K M P R
SOP-8 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019
Marking Diagram
Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov , L=Dec) L = Lo t C ode
3/ 4
Version: Preliminary
Preliminary
TSM4416
30V N-Channel MOSFET
Notice
Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these produc ts for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
4/ 4
Version: Preliminary
