TSM4416D
30V Dual N-Channel MOSFET
SOP-8
Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2
PRODUCT SUMMARY VDS (V)
30
RDS(on)(m )
15 @ VGS = 4.5V 24 @ VGS = 2.5V
ID (A)
11 10
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Load Switch PWM Application
Ordering Information
Part No.
TSM4416DCS RL TSM4416DCS RLG
Package
SOP-8 SOP-8
Packing
2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel Dual N-Channel MOSFET
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (TA=25oC, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
30 ±20 8.5 40 2.6 2.5 1.6 +150 -55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Thermal Resistance Junction to Foot Thermal Resistance Junction to Ambient Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJF RӨJA
Limit
25 50
Unit
o o
C/W C/W
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Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 250uA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 24V, VGS = 0V VGS = 4.5V, ID = 10A VDS = 15V, ID = 10A IS = 1A, VGS = 0V VGS = 0V, ID = 250uA
Symbol
BVDSS VGS(TH) IGSS IDSS RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on)
Min
30 1 -----------------
Typ
-1.8 --12 16 17 0.71 7.7 1.6 3.1 890 159.6 83.2 11.1 8.4 25.3 2.8
Max
-3 ±100 -1.0 15 24 -1.0 10.01 2.08 4.03 ---22.2 16.8 50.6 5.6
Unit
V V nA uA m S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
b,c
VDS = 15V, ID = 10A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, ID = 10A, VGEN = 10V, RG = 0.3
tr td(off)
nS
Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.
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Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Safety Operation Area
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Version: A11
TSM4416D
30V Dual N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM A B C D F G K M P R
SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
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Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Notice
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Version: A11