TSM4420CS

TSM4420 Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7 , 8. Drain Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 1 3 .5 A RDS (on), Vgs @ 10V, Ids @ 13.5A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 11A = 11mΩ Features  Advanced trench process technology High Density Cell Design for U ltra Low On-Resistance Fully Characterized Avalanche Voltage and Curren t   Block Diagram Ordering Information Part No . T S M4 4 2 0 C S Packing Pa c k a ge SOP-8 Tape & Reel (2,500pcs / Reel) Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu rrent Pulsed Drain Current Maximum Power Dissipation Operating Junction Tempera ture Operating Junction and S torage Temperatu re Range TA = 25 C TA = 70 C o o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 25 ±20 13.5 50 2 1.3 +150 -55 to +150 Unit V V A W o o C C Thermal Performance Parameter Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current lim ited by the package 2 2. 1 -in 2oz Cu P CB board Symbol Rθjc Rθja Limit 2.2 50 Unit o C/W TSM4420 1 -3 2005/08 rev. B Electrical Characteristics TJ = 25 C, unless otherwise noted o Parameter Static Drain-Source B reakdown Voltage Drain-Source On -State Resistance Gate Threshold Voltage Zero Gate Voltage Dra in Current Gate Body Leakage Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 4.5V, ID = 11A VGS = 10V, ID = 13.5A VDS = VGS, ID = 250uA VDS = 24V, VGS = 0V VGS = ± 20V, VDS = 0V VDS =10V, ID = 35A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS g fs 25 --1.0 ---- -9 7 ---50 -11 8.5 3.0 1.0 ±100 -- V mΩ mΩ V uA nA S Dynamic Total Gate Charge Gate-Source Charge Gate-Dra in Charge Turn-On Delay T ime Turn-On Rise T ime Turn-Off Delay T ime Turn-Off Fall Time VDD = 15V, RL = 15Ω, ID = 1A, V GEN = 10V, RG = 2 4 Ω VDS = 15V, ID = 13.5A , VGS = 5V Qg Q gs Q gd td(on) tr td(off) tf --------6.6 4.0 15 11 40 12 25 --25 18 60 20 nS nC Source-Drain D iode Max. Diode Forwa rd Current Diode Forward Voltage IS = 20A, VGS = 0V Note: 1. pulse test: pulse wid th