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TSM4425CSRL

TSM4425CSRL

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM4425CSRL - 30V P-Channel MOSFET - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSM4425CSRL 数据手册
TSM4425 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 12 @ VGS = -10V 19 @ VGS = -4.5V ID (A) -11 -8.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● Load Switches Notebook PCs Desktop PCs Ordering Information Part No. TSM4425CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel P-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -30 ±20 -11 -50 -2.1 2 .5 1.6 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Foot Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol R Ө JF RӨJA Limit 18 52.5 Unit o o C/W C/W 1/6 Version: A09 TSM4425 30V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Conditions VGS = 0V, ID = -250uA VDS = VGS, ID = -250µA VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VDS = -5V, VGS = -10V VGS = -10V, ID = -11A VGS = -4.5V, ID = -8.5A VDS = -15V, ID = -11A IS = -2.1A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -30 -1 ---5 0 --------------- Typ -----10 15 23 -64 11 25 3680 930 620 15 13 100 53 Max --3 ±100 -1.0 -12 19 --1.3 ----------- Unit V V nA µA A mΩ S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b a Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = -15V, ID = -11A, VGS = -10V VDS = -8V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -15V, RL = 15Ω, ID = -1A, VGEN = -10V, nS RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: A09 TSM4425 30V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A09 TSM4425 30V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A09 TSM4425 30V P-Channel MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: A09 TSM4425 30V P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A09
TSM4425CSRL
物料型号: - 型号为TSM442530V,是一款P-Channel MOSFET。

器件简介: - TSM442530V是由台湾半导体制造的P沟道MOSFET,采用先进的沟槽工艺技术和高密度单元设计,以达到超低导通电阻。

引脚分配: - SOP-8封装的引脚定义如下: - 8. Drain - 1. Source - 2. Source - 7. Drain - 3. Source - 6. Drain - 4. Gate - 5. Drain

参数特性: - 最大漏源电压(VDs)为-30V。 - 栅源电压(VGs)为±20V。 - 连续漏电流(l)为-11A。 - 脉冲漏电流(IDM)为-50A。 - 最大功耗(PD)在Ta=25°C时为2.5W,在Ta=75°C时为1.6W。 - 最大工作结温(TJ)为+150°C。 - 工作结温和存储温度范围(TJ, TSTG)为-55至+150°C。

功能详解: - 该MOSFET适用于负载开关、笔记本电脑和台式机。

应用信息: - 适用于负载开关、笔记本电脑和台式机。

封装信息: - 提供了SOP-8封装的尺寸图纸,包括最小值、最大值、英寸和毫米的测量。 - 还提供了标记图,显示了如何识别不同年份、月份和批次的代码。
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