TSM4426
20V N-Channel MOSFET
SOP-8
Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
30 @ VGS = 4.5V 20 40 @ VGS = 2.5V 200 @ VGS = 1.8V
ID (A)
4.5 3.5 2.0
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Specially Designed for Li-on Battery Packs Battery Switch Application
Ordering Information
Part No.
TSM4426CS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
20 ±12 8 30 2.2 2.5 1 .3 +150 -55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Thermal Resistance Junction to Foot Thermal Resistance Junction to Ambient Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
R Ө JF RӨJA
Limit
25 52.5
Unit
o o
C/W C/W
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Version: B09
TSM4426
20V N-Channel MOSFET
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 250uA VDS = VGS, ID = 250uA VGS = ±12V, VDS = 0V VDS = 20V, VGS = 0V VDS =5V, VGS = 4.5V VGS = 4.5V, ID = 4.5A VGS = 2.5V, ID = 3.5A VGS = 1.8V, ID = 2.0A VDS = 10V, ID = 6A IS = 1.7A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
20 0.6 --30 ------
Typ
-----20 28 80 30 0.7
Max
--±100 1.0 -30 40 200 -1.2
Unit
V V nA uA A mΩ S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 10V, ID = 6A, VGS = 4.5V VDS = 8V, VGS = 0V, f = 1.0MHz
-----------
4.86 0.92 1.4 562 106 75
15 65 28.4 12
-----------
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V,
nS
RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.
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Version: B09
TSM4426
20V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/3
Version: B09
TSM4426
20V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/4
Version: B09
TSM4426
20V N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM A B C D F G K M P R
SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
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Version: B09
TSM4426
20V N-Channel MOSFET
Notice
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Version: B09