TSM4431
30V P-Channel MOSFET
SOP-8
Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
-30 40 @ VGS = -10V 70 @ VGS = -4.5V
ID (A)
-5.8 -4.5
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● DC-DC Conversion Asynchronous Buck Converter P-Channel MOSFET
Ordering Information
Part No.
TSM4431CS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25ºC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25ºC T a = 7 5 ºC
Limit
-30 ±20 -5.8 -20 -2.3 2.5 1.6 +150 - 55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RӨJC RӨJA
Limit
30 50
Unit
o o
C/W C/W
1 /6
Version: A07
TSM4431
30V P-Channel MOSFET
Electrical Specifications (Ta = 25ºC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
a a
Conditions
VGS = 0V, ID = -250uA VDS = VGS, ID = -250µA VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VDS ≤ -5V, VGS = -4.5V VGS = -10V, ID = -5.8A VGS = -4.5V, ID = -4.5A VDS = -15V, ID = -5.3A IS = -2.3A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
-30 -1 ---7 --4 ------------
Typ
-----29 47 7 -18.09 6.52 3.25 1047.98 172.82 115.50 20.52 4.43 42.81 7.35
Max
--3 ±100 1.0 -40 70 --1.1 -----------
Unit
V V nA µA A mΩ S V
Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b a
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = -15V, ID = -3.5A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = -15V, RL = 15Ω, ID = -1A, VGEN = -10V,
nS
RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.
2 /6
Version: A07
TSM4431
30V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25ºC unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3 /6
Version: A07
TSM4431
30V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4 /6
Version: A07
TSM4431
30V P-Channel MOSFET
SOP-8 Mechanical Drawing
DIM A B C D F G K M P R
SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
5 /6
Version: A07
TSM4431
30V P-Channel MOSFET
Notice
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Version: A07