TSM4433

T S M4 4 3 3 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 90 @ VGS = -4.5V - 20 110 @ VGS = -2.5V 150 @ VGS = -1.8V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7 , 8. Drain ID (A) -3.9 -3.2 -2.6 Features ● ● Advance Trench Process Technology High D ensity Cell Design for Ultr a Low On-resistance Block Diagram Application ● ● DC-DC Conversion Asynchronous Buck Conver ter P-Channel MOSFET Ordering Information Part No. TSM4433C S RL Package SOP-8 Packi ng 2.5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (D iode Conduc tion) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit - 20 ±8 -3.9 - 10 -1.2 2.5 1.3 +1 5 0 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal R esistance Junction to Ambient Ther mal Resis tance (PC B mounted) Notes: a. Pulse width limited by the Maximum junction temper ature b. Sur face Mounted on FR4 Board, t ≤ 10 sec . Symbol R ӨJ F R ӨJ A Limit 19 40 Unit o o C/W C/W 1/ 7 Version: A07 T S M4 4 3 3 20V P-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Conditi ons VGS = 0V, ID = -250uA VDS = VGS, ID = -250µ A VGS = ±8V, VDS = 0V VDS = -16V, VGS = 0V VDS ≤ -5V, VGS = -4.5V VGS = -4.5V, ID = -3.9A a Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gf s VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Mi n - 20 -0.45 ---6 ---------------- Ty p -----75 90 105 6.5 - 0.8 15.23 5.49 2.74 882.51 145.54 97.26 17.28 3.73 36.05 6.19 Max --0.95 ± 100 -1.0 -90 110 150 --1.2 ----------- Unit V V nA µA A mΩ S V Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic b a VGS = -2.5V, ID = -3.2A VGS = -1.8V, ID = -2.6A VDS = -5V, ID = -4A IS = -0.9A, VGS = 0V Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching c VDS = -6V, ID = -3.9A, VGS = -4.5V VDS = -6V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -6V, RL = 6Ω , ID = -1A, VGEN = -4.5V, nS R G = 6Ω Turn-Off Fall Time tf Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature. 2/ 7 Version: A07 T S M4 4 3 3 20V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output C haracterist ics Transf er C haracteristics On-Resistance vs. Drain Current Gate C harge On-Resistance vs. Junct ion Temperature Source-Drain D iode Forward Voltage 3/ 7 Version: A07 T S M4 4 3 3 20V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate- Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/ 7 Version: A07 T S M4 4 3 3 20V P-Channel MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R SOP-8 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Marking Diagram Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov , L=Dec) L = Lo t C ode 5/ 7 Version: A07 T S M4 4 3 3 20V P-Channel MOSFET Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these produc ts for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/ 7 Version: A07 T S M4 4 3 3 20V P-Channel MOSFET 7/ 7 Version: A07