TSM4N60CIC0

T S M4 N 6 0 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 2.5 @ VGS =10V ID (A) 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology . This lates t technology has been especially designed to minimize on-state resis tance, have a high rugged avalanche charac teristics. There devices are well suited for high efficiency switch mode power supplies, active power fac tor correction, elec tronic lamp ballasts base on half bridge topology. Features ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is charac terized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fas t recovery diode. Block Diagram Ordering Information Part No. TSM4N60CZ C0 TSM4N60CI C0 TSM4N60CH C 5 TSM4N60CP RO Package TO-220 ITO-220 TO-251 TO-252 Packi ng 50pc s / T ube 50pc s / T ube 80pc s / T ube 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain to Source Avalanche Energy o (VDD = 50V, IAS=4A, L=27.5mH , RG=25Ω) , Starting TJ = 25 C Repetitive Avalanche Energy (Pulse width limited by junction temperature) Peak Diode Recovery dv/dt (ISD ≤ 4A, di/dt ≤ 200A/us, VDD ≤ BVDSS) Star ting TJ=25ºC TO-220 / TO-251 / TO-252 Maximum Power Dissipation o @Ta = 25 C ITO-220 Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM EAS EAR dv/dt PD TJ TJ, TSTG Limit 600 ± 30 4 16 240 10 4.5 70 25 +1 5 0 - 55 t o + 150 Unit V V A A mJ mJ V/ns W o o C C 1/ 9 Version: A07 T S M4 N 6 0 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal R esistance TO-220 / TO-251 / TO-252 Junction to Case ITO-220 Thermal R esistance TO-220 / ITO-220 Junction to Ambient TO-251 / TO-252 Notes: Surface mounted on FR4 board t ≤ 10sec Symbol R ӨJ C R ӨJ A Limit 1.78 5 62.5 100 Unit o C/W C/W o Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Conditi ons Symbol BVDSS ∆BVDSS / TJ IDSS IGSS VGS(TH) RDS(ON) Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS ISM VSD trr Qrr Mi n 600 ---2.0 ----------------- Ty p -0.6 ---2 15 2.8 6.2 545 60 8 10 35 45 40 ---300 2.2 Max --10 ± 100 4.0 2.5 20 --710 80 11 30 80 100 90 4 16 1.4 --- Unit V V/ C uA nA V Ω o Off Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Breakdown Voltage Temperature ID = 250uA o Coefficient Referenced to 25 C Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V Gate Body Leakage VGS = ±30V, VDS = 0V On Characteristics Gate Threshold Voltage VDS = VGS, ID = 250uA Drain-Source On-State R esistance VGS = 10V, ID = 2A Dynamic C haracteristics Total Gate Charge VDS = 480V, ID = 4A, Gate- Source Charge VGS = 10V Gate-Drain C harge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Trans fer C apacitance Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 4A, VDD = 300V, RG = 25Ω Turn-Off Delay Time Turn-Off Fall Time Source-Drain D iode Ratings and Characteristics Continuous Source Current Integral Reverse p-n Junc tion Diode in the MOSFET Pulse Source C urrent Diode Forward Voltage IS = 4A, VGS = 0V Reverse Recovery Time IS = 4A, VGS = 0V dlF/dt=100A/us R ev er s e R ec ov er y C har ge Notes: a. Pulse test: pulse w idth