TSM4N60CPROG

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)( ) 2.5 @ VGS =10V ID (A) 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts base on half bridge topology. Features ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. Package Packing 50pcs / Tube 50pcs / Tube 50pcs / Tube 50pcs / Tube 75pcs / Tube 75pcs / Tube 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel TSM4N60CZ C0 TO-220 TSM4N60CZ C0G TO-220 TSM4N60CI C0 ITO-220 TSM4N60CI C0G ITO-220 TSM4N60CH C5 TO-251 TSM4N60CH C5G TO-251 TSM4N60CP RO TO-252 TSM4N60CP ROG TO-252 Note: “G” denotes for Halogen Free N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain to Source Avalanche Energy (note c) Avalanche Current, Repetitive or Not-Repetitive (note d) Peak Diode Recovery dv/dt (note e) Total Power Dissipation @TC = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM EAS IAR dv/dt TO-220 / TO-251 / TO-252 ITO-220 PTOT TJ TJ, TSTG Limit 600 ±30 4 16 120 10 4.5 70 25 +150 -55 to +150 Unit V V A A mJ mJ V/ns W o o C C 1/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec TO-220 / TO-251 / TO-252 ITO-220 TO-220 / ITO-220 TO-251 / TO-252 Symbol RӨJC RӨJA Limit 1.78 5 62.5 100 Unit o C/W C/W o Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: a. Pulse test: pulse width