TSM4NB60CPROG

TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)( ) 2.5 @ VGS =10V ID (A) 2 General Description TO-251 (IPAK) TO-252 (DPAK) The TSM4NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● ● Low RDS(ON) 2.2 (Typ.) Low gate charge typical @ 14.5nC (Typ.) Low Crss typical @ 7.0pF (Typ.) 100% Avalanche Tested Block Diagram Ordering Information Part No. TSM4NB60CH C5G TSM4NB60CP ROG TSM4NB60CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET TSM4NB60CI C0 ITO-220 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature o Symbol VDS VGS Tc = 25ºC Tc = 100ºC ID IDM EAS IAR EAR dv/dt PTOT TJ TSTG Limit IPAK/DPAK ITO-220 600 ±30 4 2.4 16 100 4 5 4.5 50 25 150 -55 to +150 70 TO-220 Unit V V A A A mJ A mJ V/ns W ºC o C 1/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Symbol RӨJC RӨJA Limit IPAK/DPAK 2.5 83 ITO-220 5 62.5 TO-220 1.78 62.5 Unit o o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source Current Source Current (Pulse) Diode Forward Voltage Reverse Recovery Time VGS = 10V, ID = 4A, VDD = 300V, RG =25 (Note 4,5) td(on) tr td(off) tf IS ISM VSD tfr --------11 20 30 19 ---522 1.6 ----4 16 1.13 --A A V nS uC nS VDS = 480V, ID = 4A, VGS = 10V (Note 4,5) VDS = 25V, VGS = 0V, f = 1.0MHz Qg Qgs Qgd Ciss Coss Crss ------14.5 3.4 7 500 53.2 7 ------pF nC VGS = 0V, ID = 250uA VGS = 10V, ID = 2A VDS = VGS, ID = 250uA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 40V, ID = 2A BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs 600 -2.5 ----2.2 3.5 --2.6 -2.5 4.5 1 ±100 -V uA nA S V Conditions Symbol Min Typ Max Unit Source-Drain Diode Ratings and Characteristic Integral reverse diode in the MOSFET IS = 4A, VGS = 0V VGS = 0V, IS =4A, dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=4A, L=8mH, RG =25 , Starting TJ=25ºC Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 2/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 5/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 6/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing DIM A b b1 b2 b3 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.083 0.098 2.10 2.50 0.026 0.041 0.65 1.05 0.023 0.024 0.58 0.62 0.189 0.205 4.80 5.20 0.027 0.028 0.68 0.72 0.014 0.026 0.35 0.65 0.016 0.024 0.40 0.60 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 2.30 BSC 7.00 8.00 1.40 1.80 1.30 1.70 0.50 0.90 0.09 BSC 0.276 0.315 0.055 0.071 0.051 0.067 0.020 0.035 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET TO-252 Mechanical Drawing DIM A B C D E F G G1 H H1 J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.30 BSC 0.090 BSC 0.402 0.425 10.20 10.80 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 0.083 0.098 2.10 2.50 0.000 0.008 0.00 0.20 0.189 0.205 4.80 5.20 0.016 0.031 0.40 0.80 0.016 0.024 0.40 0.60 0.014 0.026 0.35 0.65 0.132 0.144 3.35 3.65 0.020 0.043 0.50 1.10 0.035 0.059 0.90 1.50 0.051 0.067 1.30 1.70 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 9/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: B11