TSM55N03CP

TSM55N03 Pin assignment: 1. Gate 2. Drain 3. Source Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 55A RDS (on), Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Features Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Improved Shoot-Through FOM Fully Characterized Avalanche Voltage and Current Specially Designed for DC/DC Converters and Motor Drivers Block Diagram Ordering Information Part No. TSM55N03CP Packing Tape & Reel Package TO-252 Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) TA = 25 oC TA = 75 C o Symbol VDS VGS ID IDM PD TJ TJ, TSTG EAS Limit 25 ±20 55 350 70 42 +150 - 55 to +150 300 Unit V V A W W/oC o o C C mJ Thermal Performance Parameter Lead Temperature (1/8” from case) Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2. 1-in2 2oz Cu PCB board Symbol TL Rθjc Rθja Limit 10 1.8 40 Unit S o C/W TSM55N03 1-3 2005/04 rev. B Electrical Characteristics TJ = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resisrance Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 4.5V, ID = 30A VGS = 10V, ID = 30A VDS = VGS, ID = 250uA VDS = 25V, VGS = 0V VGS = ± 20V, VDS = 0V BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS Rg 30 --1.0 ----- -7.5 4.5 1.6 ----- -9.0 6.0 3.0 1.0 ± 100 --- V mΩ mΩ V uA nA VDS =15V, ID = 15A gfs S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, ID = 25A, VGS = 10V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------26 6.0 5.0 17 3.5 40 6.0 2134 343 134 ----------pF nS nC VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 6Ω VDS = 15V, VGS = 0V, f = 1.0MHz Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 20A, VGS = 0V Note: 1. pulse test: pulse width