T S M5 5 N 0 3
25V N-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
25 6 @ VGS = 10V 9 @ VGS = 4.5V
TO-252
Pin Definition: 1. Gate 2. Drain 3. Source
ID (A)
30 30
Features
● ● Advance Trench Process Technology High D ensity Cell Design for Ultr a Low On-resistance
Block Diagram
Application
● ● Load Switch Dc-DC Converters and Motors Drivers
Ordering Information
Part No.
TSM55N 03C P R O
Package
TO-252
Packi ng
2.5Kpcs / 13” Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate- Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V a,b Continuous Source Current (D iode Conduc tion) Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH , RG=25Ω) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C o Ta = 70 C
o
Symbol
VDS VGS ID IDM IS EAS PD TJ TJ, TSTG
Limit
25 ± 20 55 150 20 300 65 42 +1 5 0 - 55 t o + 150
Unit
V V A A A mJ W
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Case Thermal R esistance Junction to Ambient Ther mal Resis tance (PC B mounted) Notes: a. Maximum DC current limited by the package b. Sur face Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.
Symbol
TL R ӨJ C R ӨJ A
Limit 10
1.8 40
Unit S
o o
C/W C/W
1/ 6
Version: A07
T S M5 5 N 0 3
25V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic
b
Conditi ons
VGS = 0V, ID = 250uA VDS = VGS, ID = 250uA VGS = ±20V, VDS = 0V VDS = 25V, VGS = 0V VDS ≥5V, VGS = 10V VGS = 4.5V, ID = 30A VGS = 10V, ID = 30A VDS = 15V, ID = 15A IS = 20A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gf s VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Mi n
25 1.0 --55 ---------------
Ty p
-1.9 ---7.5 4.5 55 0.85 26 6 5 2325.9 330.55 173.91 15.13 4 45.27 7.6
Max
-3.0 ± 100 1.0 -9 6 -1.3 -----------
Unit
V V nA uA A mΩ S V
Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching
c
VDS = 15V, ID = 20A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V,
nS
R G = 6Ω Turn-Off Fall Time tf Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature.
2/ 6
Version: A07
T S M5 5 N 0 3
25V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output C haracterist ics Transf er C haracteristics
On-Resistance vs. Drain Current
Gate C harge
On-Resistance vs. Junct ion Temperature
Source-Drain D iode Forward Voltage
3/ 6
Version: A07
T S M5 5 N 0 3
25V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate- Source Voltage Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/ 6
Version: A07
T S M5 5 N 0 3
25V N-Channel MOSFET
SOT-252 Mechanical Drawing
TO-252 DIMENS ION DIM A A1 B C D E F G G1 G2 H I J K L M MILLIMETERS MIN MA X 2.3BSC 4.6BSC 6.80 5.40 6.40 2.20 0.00 5.20 0.75 0.55 0.35 0.90 2.20 0.50 0.90 1.30 7.20 5.60 6.65 2.40 0.20 5.40 0.85 0.65 0.65 1.50 2.80 1.10 1.50 1.70 INCHES MIN MA X 0.09BSC 0.18BSC 0.268 0.213 0.252 0.087 0.000 0.205 0.030 0.022 0.014 0.035 0.087 0.020 0.035 0.051 0.283 0.220 0.262 0.094 0.008 0.213 0.033 0.026 0.026 0.059 0.110 0.043 0.059 0.67
Marking Diagram
Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov , L=Dec) L = Lo t C ode
5/ 6
Version: A07
T S M5 5 N 0 3
25V N-Channel MOSFET
Notice
Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these produc ts for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
6/ 6
Version: A07
