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TSM5NS50

TSM5NS50

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM5NS50 - 500V N-Channel Power MOSFET - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
TSM5NS50 数据手册
T S M5 N S 5 0 500V N-Channel Power MOSFET PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source TO-252 VDS (V) 500 RDS(on)(Ω) 0.8 @ VGS = 10V ID (A) 4 Features ● ● ● Low R DS(on) Low Gate Charge Unclamped Induc tive Switching (UIS) R ated Block Diagram Application ● ● ● Load Switch Ballast Lighting Ordering Information Part No. TSM5N S50C P RO Package TO-252 Packi ng T&R N-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Repetitive Avalanche Current Energy Avalanche Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C o Symbol VDS VGS ID IDM IAR EAS PD TJ TJ, TSTG Limit 500 ±20 4.4 20 Unit V V A A A mJ W o o 5 150 70 +150 -55 to +150 C C Thermal Performance Parameter Thermal R esistance - Junction to Case Thermal R esistance - Junction to Ambient Notes: a. When mounted on 1 inch square 2oz copper clad FR -4 Symbol R ӨJ C R ӨJ A Limit 1.78 62 Unit o o C/W C/W 1/ 6 Version: A07 T S M5 N S 5 0 500V N-Channel Power MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State R esistance Diode Forward Voltage Dynamic b a Conditi ons VGS = 0V, ID = 250µA VDS = VGS, ID = 250µ A VGS = ±20V, VDS = 0V VDS = 500V, VGS = 0V VGS = 10V, ID = 4.0A IS = 4.4A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS RDS(ON) VSD Qg Qgs Qgd Ciss Coss Crss td(on) Mi n 500 2 ---------------- Ty p ----0.7 1.0 13 3 6 400 120 40 6 3 50 10 250 Max -4 ± 100 1.0 0.8 1.5 ----------00 Unit V V nA µA Ω V Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching c VDS = 520V, ID = 4.4A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-to-Drain Reverse R ecovery IS = 4.4A, Time di/dt = 100A/uS Notes: a. Pulse test: pulse w idth
TSM5NS50 价格&库存

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