TSM6981D

TSM6981D

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM6981D - 20V Dual P-Channel MOSFET - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSM6981D 数据手册
T S M6 9 8 1 D 20V Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 40 @ VGS = -4.5V - 20 50 @ VGS = -2.5V 60 @ VGS = -1.8V TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 ID (A) -5 -4 -3 Features ● ● Advance Trench Process Technology High D ensity Cell Design for Ultr a Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM6981DC A R F Package TSSOP-8 Packi ng T&R Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (D iode Conduc tion) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD Limit -20 ±8 -5 -30 -1.0 Unit V V A A A W o o Ta = 25 C Ta = 70 C 1.14 0.73 +150 - 55 to +150 TJ TJ, TSTG C C Thermal Performance Parameter Junction to Foot (Drain) Thermal R esistance Junction to Ambient Ther mal Resis tance (PC B mounted) Notes: a. Sur face Mounted on 1” x 1” FR4 Board. b. Pulse width limited by max imum junc tion temperatur e Symbol R ӨJ F R ӨJ A Limit 40 75 Unit o o C/W C/W 1/ 6 Version: A07 T S M6 9 8 1 D 20V Dual P-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic b Conditi ons VGS = 0V, ID = - 250uA VDS = VGS, ID = - 250uA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VDS ≤-5V, VGS = -4.5V VGS = -4.5V, ID = -5A VGS = -2.5V, ID = -4A VGS = -1.8V, ID = -3A VDS = - 5V, ID = - 5A IS = - 1.0A, VGS = 0V Symbol BVDSS VGS(TH) IDSS IGSS ID(ON) RDS(ON) gf s VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Mi n - 20 -0.4 --- 20 ---------------- Ty p -----30 40 50 17 - 0.6 12.5 1.7 3.3 1020 191 140 25 43 71 48 Max --1.0 -1.0 ± 100 -30 50 60 --1.2 19 -----40 65 110 75 Unit V V uA nA A mΩ S V Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching C VDS = -10V, ID = -4.7A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -10V, RL = 10Ω, ID = -1A, VGEN = -4.5V, R G = 6Ω nS Turn-Off Fall Time tf Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature. 2/ 6 Version: A07 T S M6 9 8 1 D 20V Dual P-Channel MOSFET Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Output C haracterist ics Transf er C haracteristics On-Resistance vs. Drain Current Gate C harge On-Resistance vs. Junct ion Temperature Source-Drain D iode Forward Voltage 3/ 6 Version: A07 T S M6 9 8 1 D 20V Dual P-Channel MOSFET Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) On-Resistance vs. Gate- Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/ 6 Version: A07 T S M6 9 8 1 D 20V Dual P-Channel MOSFET TSSOP-8 Mechanical Drawing TSSOP-8 DIMENSION DIM A a B C D E e F L MILLIMETERS MIN 6.20 4.30 2.90 0.25 1.05 0.05 0.127 0.50 0.70 0.020 MA X 6.60 4.50 3.10 0.30 1.20 0.15 INCHES MIN 0.244 0.170 0.114 0.010 0.041 0.002 0.005 0.028 MA X 0.260 0.177 0.122 0.019 0.049 0.009 0.65 (typ) 0.025 (typ) 5/ 6 Version: A07 T S M6 9 8 1 D 20V Dual P-Channel MOSFET Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these produc ts for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/ 6 Version: A07
TSM6981D
物料型号: - TSM6981DCA RF TSSOP-8 T&R

器件简介: - TSM6981D20V是一款20V双P沟道MOSFET,采用先进的沟槽工艺技术和高密度单元设计,具有超低导通电阻。适用于负载开关和功率放大器开关等应用。

引脚分配: - 1. Drain 1 - 2. Source 1 - 3. Source 1 - 4. Gate 1 - 5. Gate 2 - 6. Source 2 - 7. Source 2 - 8. Drain 2

参数特性: - 漏源电压(VDS):-20V - 栅源电压(VGS):±8V - 连续漏电流(VGS @4.5V):-5A - 脉冲漏电流(VGS @4.5V):-30A - 连续源电流(二极管导通):-1.0A - 最大功耗:在Ta = 70°C时为0.73W - 工作结温范围:TJ, TSTG - 55至+150°C

功能详解: - 该器件包含两个P沟道MOSFET,具有低导通电阻和快速开关特性,适用于需要高效率和低功耗的应用场合。

应用信息: - 适用于负载开关和功率放大器开关等应用。

封装信息: - TSSOP-8封装,符合RoHS合规性。
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