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TSM6981DCARV

TSM6981DCARV

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM6981DCARV - 20V Dual P-Channel MOSFET - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
TSM6981DCARV 数据手册
TSM6981D 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY VDS (V) RDS(on)(m ) 40 @ VGS = -4.5V -20 50 @ VGS = -2.5V 60 @ VGS = -1.8V ID (A) -5 -4 -3 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM6981DCA RV TSM6981DCA RVG Package TSSOP-8 TSSOP-8 Packing 3Kpcs / 13” Reel 3Kpcs / 13” Reel Dual P-Channel MOSFET Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Limit -20 ±8 -5 -30 -1.0 1.14 Unit V V A A A W Ta = 25 C Ta = 70 C 0.73 +150 - 55 to +150 o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol RӨJF RӨJA Limit 40 75 Unit o o C/W C/W 1/6 Version: C07 TSM6981D 20V Dual P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage D ynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching C Conditions VGS = 0V, ID = - 250uA VDS = VGS, ID = - 250uA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VDS ≤-5V, VGS = -4.5V VGS = -4.5V, ID = -5A VGS = -2.5V, ID = -4A VGS = -1.8V, ID = -3A VDS = - 5V, ID = - 5A IS = - 1.0A, VGS = 0V Symbol BVDSS VGS(TH) IDSS IGSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -20 -0.4 ---20 ---------------- Typ -----30 40 50 17 - 0.6 12.5 1.7 3.3 1020 191 140 25 43 71 48 Max --1.0 -1.0 ±100 -40 50 60 --1.2 19 -----40 65 110 75 Unit V V uA nA A m S V VDS = -10V, ID = -4.7A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -10V, RL = 10 , ID = -1A, VGEN = -4.5V, nS RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: C07 TSM6981D 20V Dual P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: C07 TSM6981D 20V Dual P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: C07 TSM6981D 20V Dual P-Channel MOSFET TSSOP-8 Mechanical Drawing DIM A a B C D E e F L TSSOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.20 6.60 0.244 0.260 4.30 4.50 0.170 0.177 2.90 3.10 0.114 0.122 0.65 (typ) 0.025 (typ) 0.25 0.30 0.010 0.019 1.05 1.20 0.041 0.049 0.05 0.15 0.002 0.009 0.127 0.005 0.50 0.70 0.020 0.028 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: C07 TSM6981D 20V Dual P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: C07
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