TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
20 25 @ VGS = 4.5V 33 @ VGS = 2.5V
SOT-26
Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1
ID (A)
5.4 4.3
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Specially Designed for Li-on Battery Packs Battery Switch Application
Ordering Information
Part No.
TSM6988DCX6 RF
Package
SOT-26
Packing
3Kpcs / 7” Reel Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
20 ±12 6 30 1.4 1.25 0.8 +150 -55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJF RӨJA
Limit
30 100
Unit
o o
C/W C/W
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Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 250uA VDS = VGS, ID = 250uA VGS = ±12V, VDS = 0V VDS = 16V, VGS = 0V VDS ≥5V, VGS = 4.5V VGS = 4.5V, ID = 5.4A VGS = 2.5V, ID = 4.5A VDS = 10V, ID = 6.0A IS = 1.5A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
20 0.6 --30 ---------------
Typ
-0.8 ---20 26 30 0.6 15 3.4 1.2 950 450 135 140 210 3700 2000
Max
-1.0 ±10 1.0 -25 33 -1.2 20 -----200 250 4800 2600
Unit
V V uA uA A mΩ S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 10V, ID = 6A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V,
nS
RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.
2 /6
Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
SOT-26 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-26 DIMENSION MILLIMETERS INCHES MIN MIN TYP MAX TYP 0.95 BSC 1.9 BSC 2.60 1.40 2.80 1.00 0.00 0.35 0.10 0.30 5º 2.80 1.50 2.90 1.10 -0.40 0.15 --3.00 1.70 3.10 1.20 0.10 0.50 0.20 0.60 10º 0.1024 0.0551 0.1101 0.0394 0.00 0.0138 0.0039 0.0118 5º 0.0157 0.0059 --0.0374 BSC
MAX
0.0748 BSC 0.1102 0.1181 0.0591 0.1142 0.0433 0.0669 0.1220 0.0472 0.0039 0.0197 0.0079 0.0236 10º
Marking Diagram
88 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
5 /6
Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: B07
