TSM6N50
500V N-Channel Power MOSFET
ITO-220 TO-252 (DPAK) TO-251 (IPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
500
RDS(on)( )
1.4 @ VGS =10V
ID (A)
2.8
General Description
The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
● ● ● ● Low RDS(ON) 1.4 (Max.) Low gate charge typical @ 25nC (Typ.) Low Crss typical @ 15pF (Typ.) Fast Switching
Block Diagram
Ordering Information
Part No.
TSM6N50CI C0 TSM6N50CP RO TSM6N50CH C5
Package
ITO-220 TO-252 TO-251
Packing
50pcs / Tube 2.5Kpcs / 13” Reel 75pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature
o
Symbol
VDS VGS Ta = 25ºC Ta = 100ºC ID IDM EAS IAR ITO-220 TO-252. TO-251 PTOT TJ TSTG
Limit
500 ±30 5 3 15 180 5 25 90 150 -55 to +150
Unit
V V A A A mJ A W ºC o C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case ITO-220 TO-252. TO-251
Symbol
RӨJC RӨJA
Limit
5 2.78 62.5
Unit
o o
C/W C/W
Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec
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TSM6N50
500V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Dynamic
b
Conditions
VGS = 0V, ID = 250uA VGS = 10V, ID = 2.8A VDS = VGS, ID = 250uA VDS = 500V, VGS = 0V VGS = ±20V, VDS = 0V VDS = 8V, ID = 1A
Symbol
BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd Ciss Coss Crss td(on)
Min
500 -2.0 ------------------
Typ
-1.15 ---2.6 25 5 10 680 85 15 20 40 90 45 ---430 2
Max
-1.4 4.0 1 ±10 -33 --900 110 20 50 90 190 100 5 15 1.6 ---
Unit
V V uA uA S
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 400V, ID = 5A, VGS = 10V
nC
VDS = 25V, VGS = 0V, f = 1.0MHz
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings and Characteristic Source Current Source Current (Pulse) Diode Forward Voltage Reverse Recovery Time Integral reverse diode in the MOSFET IS = 5A, VGS = 0V VGS = 0V, IS = 5A, VGS = 10V, ID = 5A, VDD = 250V, RG =25
tr td(off) tf IS ISM VSD tfr
nS
A A V nS uC
dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=5A, L=10mH, Starting TJ=25ºC Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 4: Essentially Independent of Operating Temperature
.
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500V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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TSM6N50
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
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500V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
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500V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
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500V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
DIM A B C D E F G H I J K L M N O
ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
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TSM6N50
500V N-Channel Power MOSFET
TO-251 Mechanical Drawing
DIM A b b1 b2 b3 C C1 D E e L L1 L2 L3
TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.083 0.098 2.10 2.50 0.026 0.041 0.65 1.05 0.023 0.024 0.58 0.62 0.189 0.205 4.80 5.20 0.027 0.028 0.68 0.72 0.014 0.026 0.35 0.65 0.016 0.024 0.40 0.60 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 2.30 BSC 7.00 8.00 1.40 1.80 1.30 1.70 0.50 0.90 0.09 BSC 0.276 0.315 0.055 0.071 0.051 0.067 0.020 0.035
Marking Diagram
Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
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TSM6N50
500V N-Channel Power MOSFET
TO-252 Mechanical Drawing
DIM A B C D E F G G1 H H1 J K L M
TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.30 BSC 0.090 BSC 0.402 0.425 10.20 10.80 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 0.083 0.098 2.10 2.50 0.000 0.008 0.00 0.20 0.189 0.205 4.80 5.20 0.016 0.031 0.40 0.80 0.016 0.024 0.40 0.60 0.014 0.026 0.35 0.65 0.132 0.144 3.35 3.65 0.020 0.043 0.50 1.10 0.035 0.059 0.90 1.50 0.051 0.067 1.30 1.70
Marking Diagram
Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
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500V N-Channel Power MOSFET
Notice
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