TSM7311DCS

TSM7311D 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6. Drain 2 7, 8. Drain 1 VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =22mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =30mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM7311DCS Packing Tape & Reel 2,500/per reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta = 70 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit 20V ± 12 6.5 30 2.0 1.3 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t= 5V VDS = 10V, ID = 6.5A VDS = 10V, ID = 6.5A, VGS = 4.5V VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω VDS = 10V, VGS = 0V, f = 1.0MHz Symbol BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS Min 20 --0.5 --30 -------------- Typ -22 30 0.85 ---30 15.5 2 3.5 75 125 600 300 1336 220 130 -0.6 Max -30 40 -1.0 ± 100 --30 --100 150 720 360 ---2.0 1.2 Unit V mΩ V uA nA A S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 2.0A, VGS = 0V A V VSD nC nS pF Note : pulse test: pulse width