TSM802
20V N-Channel MOSFET w/ESD Protected
TDFN 3x3
Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain
PRODUCT SUMMARY VDS (V)
20
RDS(on)(mΩ)
25 @ VGS = 4.5V 30 @ VGS = 2.5V 65 @ VGS = 1.8V
ID (A)
5 4 2
Features
● ● ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0.75mm (typ.) ESD Protect 2KV
Block Diagram
Application
● ● Specially Designed for Li-on Battery Packs Battery Switch Application
Ordering Information
Part No. Package Packing
3Kpcs / 7” Reel 3Kpcs / 7” Reel 10Kpcs / 13” Reel 10Kpcs / 13” Reel N-Channel MOSFET
TSM802CQ RV TDFN 3x3 TSM802CQ RVG TDFN 3x3 TSM802CQ RK TDFN 3x3 TSM802CQ RKG TDFN 3x3 Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a,b Continuous Source Current (Diode Conduction) Maximum Power Dissipation Ta = 25 C o Ta = 75 C
o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG
Limit
20 ±12 6 30 1.4 3 .1 1.6 +150 -55 to +150
Unit
V V A A A W
o o
Operating Junction Temperature Operating Junction and Storage Temperature Range
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on 1”x1” FR4 Board, t ≤ 10 sec. c. Pulse limited
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