TSM9409

TSM9409

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM9409 - 60V P-Channel MOSFET - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSM9409 数据手册
T S M9 4 0 9 60V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7 , 8. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) - 60 155 @ VGS = -10V 200 @ VGS = 4.5V ID (A) -3.5 -3.1 Features ● ● Advance Trench Process Technology High D ensity Cell Design for Ultr a Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM9409C S R F Package SOP-8 Packi ng 2.5Kpcs / 13” Reel P-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (D iode Conduc tion) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 70 C Limit - 60 ± 20 -3.5 - 30 -2.5 3.0 2.1 +1 5 0 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal R esistance Junction to Ambient Ther mal Resis tance (PC B mounted) Notes: a. Pulse width limited by the Maximum junction temper ature b. Sur face Mounted on FR4 Board, t ≤ 10 sec . Symbol R ӨJ C R ӨJ A Limit 30 50 Unit o o C/W C/W 1/ 6 Version: A08 T S M9 4 0 9 60V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Conditi ons VGS = 0V, ID = -250uA VDS = VGS, ID = -250µ A VGS = ±20V, VDS = 0V VDS = -60V, VGS = 0V VDS =-5V, VGS = -10V VGS = -10V, ID = -3.5A VGS = -4.5V, ID = -3.1A VDS = -15V, ID = -3.5A IS = -2.5A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gf s VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Mi n - 60 -1.0 --- 20 --------------- Ty p -----125 153 8 -1.25 6 1.7 1.5 540 60 30 7 9 19 4 Max --± 100 -1.0 -155 200 --1.5 ----------- Unit V V nA µA A mΩ S V Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic b a Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching c VDS = -15V, ID = -3.5A, VGS = -10V VDS = -30V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -15V, RL = 15Ω, ID = -1A, VGEN = -10V, nS R G = 6Ω Turn-Off Fall Time tf Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature. 2/ 6 Version: A08 T S M9 4 0 9 60V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output C haracterist ics Transf er C haracteristics On-Resistance vs. Drain Current Gate C harge On-Resistance vs. Junct ion Temperature Source-Drain D iode Forward Voltage 3/ 6 Version: A08 T S M9 4 0 9 60V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate- Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/ 6 Version: A08 T S M9 4 0 9 60V P-Channel MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R SOP-8 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Marking Diagram Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov , L=Dec) L = Lo t C ode 5/ 6 Version: A08 T S M9 4 0 9 60V P-Channel MOSFET Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these produc ts for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/ 6 Version: A08
TSM9409
物料型号: - TSM9409CS RF

器件简介: - TSM9409是一款60V P-Channel MOSFET,采用先进的沟槽工艺技术和高密度单元设计,具有超低导通电阻。

引脚分配: - 1. Source - 2. Source - 3. Source - 4. Source - 5, 6, 7, 8. Drain - 4. Gate

参数特性: - 漏源电压(VDS):-60V - 栅源电压(VGS):±20V - 连续漏电流(ID):-3.5A - 脉冲漏电流(IDM):-30A - 连续源电流(Is):-2.5A - 最大功耗(PD):3.0W - 最大功率耗散(Ta = 70°C):2.1W - 工作结温(TJ):+150℃ - 工作结和存储温度范围(TJ, TSTG):-55 to +150℃

功能详解: - 该器件具有低导通电阻、高密度单元设计,适用于负载开关和功率放大器开关等应用。

应用信息: - 适用于负载开关(Load Switch)和功率放大器开关(PA Switch)。

封装信息: - SOP-8封装,2.5Kpcs/13"卷装。
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