TSM9428

TSM9428 Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain Preliminary 20V N-Channel Enhancement-Mode MOSFET VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =30mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.2A =40mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Block Diagram Ordering Information Part No. TSM9428CS Packing Tape & Reel 2,500/per reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Pulsed Drain Current, Maximum Power Dissipation Ta = 25 C Ta = 70 oC Operating Junction Temperature Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 20V ±8 6 20 2.5 1.6 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t