T S M9 4 3 4 D
20V Dual P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
- 20 40 @ VGS = -4.5V 60 @ VGS = -2.5V
SOP-8
Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain
1 1 2 2
ID (A)
-6.4 -5.1
Features
● ● Advance Trench Process Technology High D ensity Cell Design for Ultr a Low On-resistance
Block Diagram
Application
● ● Load Switch PA Switch
Ordering Information
Part No.
TSM9434DC S RL
Package
SOP-8
Packi ng
2.5Kpcs / 13” Reel Dual P-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (D iode Conduc tion) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG
Limit
- 20 ±8 -6.4 ± 10 -2.5 2.5 1.6 +1 5 0 - 55 to +150
Unit
V V A A A W
o o
Ta = 25 C Ta = 70 C
C C
Thermal Performance
Parameter
Junction to Case Thermal R esistance Junction to Ambient Ther mal Resis tance (PC B mounted) Notes: a. Sur face Mounted on 1” x 1” FR4 Board. b. Pulse width limited by max imum junc tion temperatur e
Symbol
R ӨJ C R ӨJ A
Limit
30 50
Unit
o o
C/W C/W
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T S M9 4 3 4 D
20V Dual P-Channel MOSFET
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Drain-Source On-State R esistance Forward Transconduc tance Diode Forward Voltage Dynamic
b
Conditi ons
VGS = 0V, ID = - 250uA VDS = VGS, ID = - 250uA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VDS ≤-5V, VGS = -4.5V VGS = -4.5V, ID = -6.4A VGS = -2.5V, ID = -5.1A VDS = -9V, ID = -6.4A IS = -2.5A, VGS = 0V
Symbol
BVDSS VGS(TH) IDSS IGSS ID(ON) RDS(ON) gf s VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Mi n
- 20 -0.4 --- 10 ---------------
Ty p
-----31 45 14 - 0.9 12.5 1.7 3.3 1020 191 140 25 43 71 48
Max
--1.0 -1.0 ± 100 -40 60 --1.2 19 -----40 65 110 75
Unit
V V uA nA A mΩ S V
Total Gate Charge Gate- Source Charge Gate-Drain C harge Input Capacitance Output Capacitance Reverse Trans fer C apacitance Switching
C
VDS = -10V, ID = -6.4A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = -10V, RL = 10Ω, ID = -1A, VGEN = -4.5V,
nS
R G = 6Ω Turn-Off Fall Time tf Notes: a. pulse tes t: PW ≤ 300µ S, duty cycle ≤2% b. For D ESIGN AID ONLY, not subjec t to produc tion testing. b. Switching time is essentially independent of operating temperature.
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T S M9 4 3 4 D
20V Dual P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output C haracterist ics Transf er C haracteristics
On-Resistance vs. Drain Current
Gate C harge
On-Resistance vs. Junct ion Temperature
Source-Drain D iode Forward Voltage
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Version: B07
T S M9 4 3 4 D
20V Dual P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate- Source Voltage Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
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T S M9 4 3 4 D
20V Dual P-Channel MOSFET
SOP-8 Mechanical Drawing
DIM A B C D F G K M P R
SOP-8 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019
Marking Diagram
Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov , L=Dec) L = Lo t C ode
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T S M9 4 3 4 D
20V Dual P-Channel MOSFET
Notice
Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these produc ts for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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