TSM9966DCX6

TSM9966DCX6 20V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 1 2. Drain 3. Gate 2 4. Source 2 5. Drain 6. Source 1 VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 5A = 30mΩ RDS (on), Vgs @ 2.5V, Ids @ 4A = 40mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Surface mount Fast switching Block Diagram Ordering Information Part No. TSM9966DCX6 Packing Tape & Reel Package SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta > 25 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit 20V ± 12 5 20 1.25 16 +150 - 55 to +150 Unit V V A A W mW/ oC o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t